Flat band and Lifshitz transition in long-range-ordered supergraphene obtained by Erbium intercalation

Autor: A. Zaarour, V. Malesys, J. Teyssandier, M. Cranney, E. Denys, J. L. Bubendorff, A. Florentin, L. Josien, F. Vonau, D. Aubel, A. Ouerghi, C. Bena, L. Simon

Publikováno v: Physical Review Research, Vol 5, Iss 1, p 013099 (2023)

We report the observation of graphene doped up to the Lifshitz transition obtained solely by the intercalation of Erbium atoms. ARPES measurements show that a wide flat band is generated around the M point of the Brillouin zone. We propose that this

Externí odkaz: https://doaj.org/article/801f32da3c1f46538b917994ee7b02b4

Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene

Autor: François Ducastelle, Eberth A. Quezada-Lopez, Jairo Velasco, C. Bena, Frédéric Joucken, Zhehao Ge, Kenji Watanabe, Takashi Tanagushi

Publikováno v: Physical Review Letters
Physical Review Letters, American Physical Society, 2021, 127 (10), pp.106401. ⟨10.1103/PhysRevLett.127.106401⟩
Physical Review Letters, 2021, 127 (10), pp.106401. ⟨10.1103/PhysRevLett.127.106401⟩

The properties of semiconductors can be crucially impacted by midgap states induced by dopants, which can be native or intentionally incorporated in the crystal lattice. For Bernal-stacked bilayer graphene (BLG), which has a tunable bandgap, the exis

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b5ca2ca932a5115ac1cd8bfae900bb9
https://hal.archives-ouvertes.fr/hal-03414022/document

Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene

Autor: C. Bena, Sarah Pinon, Frédéric Joucken, Zhehao Ge, Takashi Taniguchi, Vardan Kaladzhyan, Jairo Velasco, Eberth A. Quezada-Lopez, Kenji Watanabe, Aires Ferreira

Graphite crystals used to prepare graphene-based heterostructures are generally assumed to be defect free. We report here scanning tunneling microscopy results that show graphite commonly used to prepare graphene devices can contain a significant amo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31a115af6febd235f0ae8bd52ac21300

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Modeling long imperfect SNS junctions and Andreev bound states using two impurities and the T -matrix formalism

Autor: Vardan Kaladzhyan, C. Bena, Sarah Pinon

Publikováno v: Physical Review B
Physical Review B, American Physical Society, 2020, 101 (20), pp.205136. ⟨10.1103/PhysRevB.101.205136⟩
Physical Review B, 2020, 101 (20), pp.205136. ⟨10.1103/PhysRevB.101.205136⟩

International audience; We provide a new analytical tool to calculate the energies of Andreev bound states (ABS) in long imperfect SNS junctions, at present these can only be described by numerical tools. We model an NS junction as a delta-function "

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a590ce566053bfdd61fa7248061e7bf
http://arxiv.org/abs/1906.10139