Zobrazeno 1 - 10
of 30
pro vyhledávání: '"C. Bajgar"'
Publikováno v:
Nanostructured Materials. 5:207-223
Transport models have predicted that the thermal conductivity of SiGe alloys could be appreciably reduced by incorporating discrete 40 A particles within the SiGe grains. These particles would scatter the thermal phonons which transport most of the h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::863aa0761e44b579c939ffcc52fc3a6a
https://doi.org/10.1016/0965-9773(95)00018-6
https://doi.org/10.1016/0965-9773(95)00018-6
Autor:
A. Keshavarzi, C. Bajgar, T.B. Stellwag, S. M. Vernon, S.J. Wojtczuk, K. Emery, S.P. Tobin, Michael R. Melloch, S. Venkatensan, Mark Lundstrom
Publikováno v:
IEEE Transactions on Electron Devices. 37:469-477
A critical assessment of the photovoltaic quality of epitaxial GaAs grown by metal-organic chemical vapor deposition (MOCVD) and by molecular-beam epitaxy (MBE) is reported. Epitaxial films of nominally identical structure were grown by the two techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a986a90201d6f0e0e0127852b15cb755
https://doi.org/10.1109/16.46385
https://doi.org/10.1109/16.46385
Autor:
Michael R. Melloch, Keith Emery, A. Keshavarzi, M.S. Lundstorm, S.P. Tobin, T.B. Stellwag, C. Bajgar
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
One-sun AM 1.5 efficiencies of 23.8% for 0.25 cm/sup 2/ area GaAs solar cells fabricated from molecular beam epitaxy (MBE) material were obtained. The performance is comparable to that obtained with metalorganic chemical vapor deposited (MOCVD) mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09bb6a6e20d33705f017dfc5cef279d8
https://doi.org/10.1109/pvsc.1990.111611
https://doi.org/10.1109/pvsc.1990.111611
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
The development of GaAs solar cells having a 1-sun, AM1.5 efficiency of 24.8% and a concentrator having an AM1.5 efficiency of 28.7% at 200 suns (both independently measured) is described. Corresponding AM0 efficiencies are 21.7 and 24.5%. These are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd3d6bf06dc4be49744be8e9cebca802
https://doi.org/10.1109/pvsc.1990.111610
https://doi.org/10.1109/pvsc.1990.111610
Autor:
G.B. Lush, C. Bajgar, A. Keshavarzi, K. Emery, S. P. Tobin, Michael R. Melloch, Mark Lundstrom, T.B. Stellwag
Publikováno v:
Applied Physics Letters. 57:52-54
The quality of pn junction photodetectors made of Al0.2Ga0.8As has been investigated as a first step in the optimization of tandem solar cells. We have obtained 1 sun AM1.5 efficiencies of 16.1% for 0.25 cm2 Al0.22Ga0.78As solar cells fabricated from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11f92638585c39e0b98ceba06750d7c7
https://doi.org/10.1063/1.103575
https://doi.org/10.1063/1.103575
Autor:
Mark Lundstrom, K. Emery, S. P. Tobin, Michael R. Melloch, T.B. Stellwag, C. Bajgar, A. Keshavarzi
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:379
Previously, solar cells fabricated from molecular‐beam epitaxually (MBE)‐grown material have been inferior in performance to those fabricated from metalorganic chemical vapor deposited (MOCVD) material. We have obtained 1‐sun air mass (AM) 1.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd33aa221a0df3d35af5229ccd6c0738
https://doi.org/10.1116/1.585031
https://doi.org/10.1116/1.585031
Publikováno v:
Solar Cells. 24:103-115
Efficiencies of 23.7% and 23.6% (1 sun, air mass (AM) 1.5 global) have been achieved for GaAs p-n heteroface cells with areas of 0.25 cm2 and 4.1 cm2 respectively. GaAs concentrator cells with efficiencies of 25.4% (207 suns, AM 1.5 direct) have also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3473fd6864fc0c5d0c1e0d78ab2cfd04
https://doi.org/10.1016/0379-6787(88)90040-3
https://doi.org/10.1016/0379-6787(88)90040-3
Autor:
S.P. Tobin, C. Bajgar, S.J. Wojtczuk, C.J. Keavney, T.M. Dixon, S.M. Vernon, M.M. Sanfacon, J.T. Daly
Publikováno v:
Solar Cells. 27:107-120
This paper reports the experimental results from several technical approaches aimed at achieving highly efficient solar cells for terrestrial and space-power applications. Efficiencies of up to 28.7% (200X, AM1.5) and 24.8% (1X, AM1.5) have been achi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5f2d34dd1e0db0b8b84a04e9656581e
https://doi.org/10.1016/0379-6787(89)90021-5
https://doi.org/10.1016/0379-6787(89)90021-5
Publikováno v:
IEEE Electron Device Letters. 9:256-258
Tandem cells of GaAs grown by metalorganic chemical vapor deposition (MOCVD) on thin Ge to address both higher efficiency and reduced weight are discussed. GaAs/Ge monolithic tandem cells of 4-cm/sup 2/ area have been produced with independently veri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33256690525c17a935e6863a6b8df16e
https://doi.org/10.1109/55.708
https://doi.org/10.1109/55.708
Autor:
S.P. Tobin, L.M. Geoffroy, S.M. Vernon, D.R. Lillington, R.J. Matson, M.M. Sanfacon, C. Bajgar, V.E. Haven, Keith Emery, R. E. Hart
Publikováno v:
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference.
Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space power applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c33eec042ac6eeb85f5e66fe278eac81
https://doi.org/10.1109/pvsc.1988.105732
https://doi.org/10.1109/pvsc.1988.105732