Zobrazeno 1 - 10 of 18 pro vyhledávání: '"C. B. Zarowin"'
1
Plasma thinning of silicon-on-insulator bonded wafers
Autor: P. J. Clapis, G.J. Gardopee, P. B. Mumola, L.D. Bollinger, C. B. Zarowin, A. M. Ledger
Publikováno v: Microelectronic Engineering. 22:347-350
The AcuThin wafer thinning process for thinning bonded SOI wafers has been described. This process combines a high-speed, high data density film thickness measurement with a highly efficient PACE process to achieve precise control of SOI film thickne
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c5e19a283c19478ec4a0f68c4c87cc1
https://doi.org/10.1016/0167-9317(93)90184-7
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4
Basis of macroscopic and microscopic surface shaping and smoothing by plasma assisted chemical etching
Autor: C. B. Zarowin
Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3356
This is a summary of the basis of macroscopic shaping (or figuring) and microscopic pattern transfer and microsmoothing (or polishing) by plasma assisted chemical etching (PACE). The ability of PACE to precisely shape surfaces without mechanical cont
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::26a153e4bc0e8ed37f6543dea85f53c6
https://doi.org/10.1116/1.587512
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5
A theory of plasma‐assisted chemical vapor transport processes
Autor: C. B. Zarowin
Publikováno v: Journal of Applied Physics. 57:929-942
A theory is presented for plasma‐assisted chemical vapor transport (PACVT) processes, applicable to reactive ion or plasma etching, plasma‐assisted chemical vapor deposition and, in the absence of a plasma, low‐pressure thermally driven chemica
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7fa95a1dbb4322bc618cc3b09f693e00
https://doi.org/10.1063/1.334694
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6
Relation between the RF discharge parameters and plasma etch rates, selectivity, and anisotropy
Autor: C. B. Zarowin
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2:1537-1549
By extending earlier ideas and introducing new ones in this paper, we relate observable rf discharge parameters to the plasma etch characteristics of rate, selectivity, and anisotropy. The ion energy transport ‘‘ellipsoid’’ generated by the e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a693e170994c2a39bb305ce5a767af5
https://doi.org/10.1116/1.572466
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8
Unified approach to the temporal evolution of surface profiles in solid etch and deposition processes
Autor: G. M. Gallatin, C. B. Zarowin
Publikováno v: Journal of Applied Physics. 65:5078-5088
The differential equation describing the temporal evolution of solid surfaces subject to etching or depositon is derived. Its general properties are discussed and solutions to particular problems are obtained. The differential equation explicitly sho
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1693de97f58b26acc1a37b56ae720dc0
https://doi.org/10.1063/1.343184
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10
ELECTRON TEMPERATURE AND DENSITY IN ARGON ION LASER DISCHARGES
Autor: C. B. Zarowin
Publikováno v: Applied Physics Letters. 15:36-38
Kinetic theory is used to calculate the electron temperature and drift velocity in a continuous argon ion laser discharge. The calculated electron mean energies range from 1.0–7.5 eV, increasing with current density to the ⅔ power. The calculated
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c33b226b711b17d1bf2030ecd677811e
https://doi.org/10.1063/1.1652835
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