Zobrazeno 1 - 10 of 170 pro vyhledávání: '"C. B. DUKE"'
1
The electronic structure of polymers: Relation to molecular architecture
Autor: W. K. Ford, C. B. Duke
Publikováno v: International Journal of Quantum Chemistry. 24:597-608
A spectroscopic CNDO molecular-orbital model of the electronic structure of polymer macromolecules is developed and applied to interpret UV photoemission and absorption spectra of polyacetylene, poly(p-phenylene), polypyrrole, poly(p-phenylene vinyle
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6aaa7fe3405866db5be471a71b23e044
https://doi.org/10.1002/qua.560240863
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2
Chemical bonding in phosphonitrilic systems-comparison of the electronic structures of (F2PN)3, (F2PN)4, and OP(F2)NP(F2)NPF3
Autor: C. B. Duke, Kim F. Ferris
Publikováno v: International Journal of Quantum Chemistry. 36:397-407
The electronic structure of phosphonitrilic systems contain both π′ (in-plane) and π (out-of-plane) bonding systems. Earlier work in this laboratory has indicated that the d-orbital involvement in these systems affects primarily the electronic st
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a3607f834b5283c5aba613c50d20e75
https://doi.org/10.1002/qua.560360843
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3
Electron-intramolecular vibration coupling in TTF-TCNQ systems
Autor: Alberto Girlando, Renato Bozio, Cesare Pecile, Nunzio O. Lipari, M. J. Rice, C. B. Duke
Publikováno v: International Journal of Quantum Chemistry. 12:583-594
We report calculations of the linear electron molecular vibration coupling constants in TCNQ, TCNQ−, and TTF. A complete neglect of differential overlap (cndo) type parameterization is used for the electronic structure and a modified valence force
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::565f09891d0922357d337d0bbe265b9b
https://doi.org/10.1002/qua.560120865
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4
Inelastic collisions of electrons and positrons in solids and the dawn of surface science
Autor: C. B. Duke
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:S36-S41
Recognition of the consequences of the creation of collective excitations (e.g., plasmons) of the valence electrons in a solid by “low-energy,” i.e., 50–500 eV, electrons led to a reformulation of the theory of electron solid scattering, the us
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::034b1f377b683f0df8409188094175e3
https://doi.org/10.1116/1.1599863
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5
The birth and evolution of surface science: Child of the union of science and technology
Autor: C. B. Duke
Publikováno v: Proceedings of the National Academy of Sciences. 100:3858-3864
This article is an account of the birth and evolution of surface science as an interdisciplinary research area. Surface science emanated from the confluence of concepts and tools in physics and chemistry with technological innovations that made it po
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::429842217711e5888a5d23a68cef16cc
https://doi.org/10.1073/pnas.0730358100
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6
Calculation of the Schottky barrier height at the Al/GaAs(001) heterojunction: Effect of interfacial atomic relaxations
Autor: R. G. Dandrea, C. B. Duke
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:848-853
First‐principle local density functional calculations are used to determine the equilibrium atomic geometry and associated Schottky barrier height at the ideal Al/GaAs(001) interface. The 1.3% lattice mismatch (after 45° rotation of the Al into an
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1fe5f77fe2349b60012d9120ec3e6786
https://doi.org/10.1116/1.578316
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7
Structure and bonding of tetrahedrally coordinated compound semiconductor cleavage faces
Autor: C. B. Duke
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:2032-2040
The cleavage faces for zinc blende structure compound semiconductors are the (110) surfaces. Those for wurtzite structure compound semiconductors are the (1010) and (1120) surfaces. The (100) and (1120) surfaces consist of chains of equal numbers of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::df43fa9088de301740689039bac5dd1c
https://doi.org/10.1116/1.578020
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8
Dynamical low-energy electron-diffraction analysis of bismuth and antimony epitaxy on GaAs(110)
Autor: T. Guo, D. L. Lessor, W. K. Ford, C. B. Duke
Publikováno v: Physical Review B. 42:8952-8965
The atomic geometry of Bi adsorbed on GaAs(110) is determined using low-energy electron diffraction (LEED) and compared with calculated atomic geometries of GaAs(111)-p(1\ifmmode\times\else\texttimes\fi{}1)-Sb and clean GaAs(110). The analysis of the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fca9714c2e80d7727979522dae3bb5e2
https://doi.org/10.1103/physrevb.42.8952
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10
Design of ohmic contacts top‐ZnSe
Autor: R. G. Dandrea, C. B. Duke
Publikováno v: Applied Physics Letters. 64:2145-2147
First‐principle density functional calculations are used to design improved ohmic contacts to p‐ZnSe. Two design strategies are applied: the use of a graded semiconductor epilayer with a large valence band offset, and the imposition of an interla
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::680152c18cd8c5dd9f8d9299e4d8c6d9
https://doi.org/10.1063/1.111683
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