Zobrazeno 1 - 10
of 59
pro vyhledávání: '"C. Arvet"'
Autor:
A. Michallet, C. Bout, J. Fort, T. Skotnicki, V. Beugin, F. Pierre, D. Benoit, L. Brunet, P. Besson, C. Arvet, M.-P. Samson, C. Tabone, N. Rochat, C.-M. V. Lu, V. Loup, Perrine Batude, C. Fenouillet-Beranger, N. Posseme, Bernard Previtali, A. Roule, M Vinet
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c6fc04f99aed20c8896bd797c3521be
https://doi.org/10.7567/ssdm.2016.ps-1-07
https://doi.org/10.7567/ssdm.2016.ps-1-07
Autor:
C.M.V. Lu, C. Bout, C. Fenouillet-Beranger, A. Roule, M.P. Samson, B. Previtali, C. Arvet, A. Michallet, N. Rochat, S. Favier, R. Kachtouli, V. Loup, P. Besson, M. Garcia-Barros, N. Posseme, F. Pierre, P. Maury, D. Benoit, P. Batude, M. Vinet, T. Skotnicki
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::534a2713e48f5c968b72975fe22fbdfc
https://doi.org/10.7567/ssdm.2015.ps-2-13
https://doi.org/10.7567/ssdm.2015.ps-2-13
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 34:061301
Silicon nitride spacer etching realization is considered today as one of the most challenging processes for the fully depleted silicon on insulator devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d9727d33e9e520ce2dae5faf98dd6f1
https://doi.org/10.1116/1.4963072
https://doi.org/10.1116/1.4963072
Publikováno v:
SPIE Proceedings.
Double patterning (DP) is today the accepted solution to extend immersion lithography to the 32 nm node and beyond. Pitch splitting process and spacer process have been developed at CEA-LETI-Minatec. This paper will focus on the optimization of dry e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42f2bc6b397c5e77773723041aacf02d
https://doi.org/10.1117/12.814856
https://doi.org/10.1117/12.814856
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference.
We show how it was possible to develop an etching process of SiGe with a high selectivity to similar materials such as nitride, oxide and even pure silicon. The study of the material and process parameters has lead to an understanding of the etching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::737407211827ceded395620a2c43c35d
https://doi.org/10.1109/imnc.2003.1268782
https://doi.org/10.1109/imnc.2003.1268782
Autor:
V. Caubet, S. Borel, C. Arvet, J. Bilde, D. Chanemougame, S. Monfray, R. Ranica, P. Mazoyer, T. Skotnicki
Publikováno v:
Japanese Journal of Applied Physics. 44:5795
The removal of a sacrificial SiGe layer by isotropic etching has been newly improved for silicon-on-nothing (SON) technology by increasing etching selectivity to the Si conduction channel. Still based on CF4 plasma chemistry, power and pressure are a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c7c890c2551f3e1ca80e851901192c9
https://doi.org/10.1143/jjap.44.5795
https://doi.org/10.1143/jjap.44.5795
Autor:
C. Fenouillet-Beranger, C. Gallon, A. Vandooren, D. Aime, L. Tosti, F. Leverd, O. Faynot, C. Arvet, C. Perrot, B. Froment, M. Muller, F. Allain, A. Toffoli, S. Vanbergue, M. L. Villani, D. Delille, S. Pokrant, T. Skotnicki
Publikováno v:
2006 European Solid-State Device Research Conference; 2006, p158-161, 4p
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Akademický článek
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