Zobrazeno 1 - 10
of 70
pro vyhledávání: '"C. Arnodo"'
Publikováno v:
Materials Science Forum. :1247-1250
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63c7a9d2db5bd8256e8e0945b88e3a97
https://doi.org/10.4028/www.scientific.net/msf.338-342.1247
https://doi.org/10.4028/www.scientific.net/msf.338-342.1247
Publikováno v:
IEEE Transactions on Electron Devices. 47:2221-2227
Silicon carbide materials offer specific advantages to MESFET applications. However, to put them to good use requires to apply higher drain voltages than in GaAs devices. Therefore, in spite of the high thermal conductivity of the SiC substrates, thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceceac8496a7e233687d2b174d170056
https://doi.org/10.1109/16.877187
https://doi.org/10.1109/16.877187
Autor:
Anelia Kakanakova-Georgieva, C. Arnodo, O. Noblanc, S. Cassette, Roumen Kakanakov, Ts. Marinova, C. Brylinski, Liliana Kassamakova
Publikováno v:
Applied Surface Science. 151:225-232
The interface chemistry of WN/4H–SiC structures has been studied by means of X-ray photoelectron spectroscopy (XPS). XPS investigations have been performed on as deposited, 800°C and 1200°C annealed (4 min) samples. The as deposited and 800°C an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f1558d317e539c108e9bda1d60fc557
https://doi.org/10.1016/s0169-4332(99)00277-9
https://doi.org/10.1016/s0169-4332(99)00277-9
Publikováno v:
Materials Science and Engineering: B. :339-344
The use of Silicon Carbide semi-insulating wafers has to be mastered in order to reach output power densities up to 3-4 W mm -1 in the 1-2 GHz frequency range (values that are currently targeted). This study shows that the buffer layer doping level a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cebb70dd120e06df76f80ba245794d3d
https://doi.org/10.1016/s0921-5107(98)00529-7
https://doi.org/10.1016/s0921-5107(98)00529-7
Publikováno v:
Thin Solid Films. :637-641
The interface chemistry of nickel and tungsten based contacts on SiC has been investigated by XPS on as-deposited samples and after contact formation. After annealing at 950 °C for 10 min, Ni/SiC and Ni/Si/SiC ohmic contacts are formed due to the ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72c7a0d4962b3ae7082b29cd8e7ec2b8
https://doi.org/10.1016/s0040-6090(98)01668-x
https://doi.org/10.1016/s0040-6090(98)01668-x
Publikováno v:
Thin Solid Films. 337:180-183
Annealed W (WN)/4H–SiC interfaces have been compared on the basis of X-ray photoelectron spectroscopy (XPS) studies. The 1200°C annealed W (WN)/4H–SiC structures are characterized by intense interface reactions leading to tungsten carbide and tu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24726271fc8bcf453a01c61d48f7805
https://doi.org/10.1016/s0040-6090(98)01199-7
https://doi.org/10.1016/s0040-6090(98)01199-7
Autor:
S. Cassette, Tz Djambova, Ivan Kassamakov, Ts. Marinova, Christian Brylinski, Anelia Kakanakova-Georgieva, C. Arnodo, Liliana Kassamakova, Roumen Kakanakov, O. Noblanc
Publikováno v:
Semiconductor Science and Technology. 13:1025-1030
The electrical properties and interface chemistry of Ti/Au/Pt/Ti Schottky contacts to n-type 4H-SiC have been investigated with respect to their utilization for MESFETs operated at high temperatures. The electrical properties of these contacts were s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b43b39cdc66d3054a622f55e396a8fb
https://doi.org/10.1088/0268-1242/13/9/010
https://doi.org/10.1088/0268-1242/13/9/010
Autor:
Anelia Kakanakova-Georgieva, C. Brylinski, Attila Sulyok, Ts. Marinova, György Radnóczi, Roumen Kakanakov, C. Arnodo, Béla Pécz, O. Noblanc, S. Cassette, Liliana Kassamakova
Publikováno v:
Materials Science Forum. :817-820
WN has been deposited by reactive sputtering on 4H-SiC to make Schottky rectifiers. The physical properties of the interface have been studied by XPS and TEM for as-deposited, 800 and 1200 C annealed samples. The two former samples reveal steep inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a5594565b392e750575a19038340d46
https://doi.org/10.4028/www.scientific.net/msf.264-268.817
https://doi.org/10.4028/www.scientific.net/msf.264-268.817
Publikováno v:
Applied Surface Science. :208-212
X-ray photoelectron spectroscopy (XPS) is used to investigate the chemical reactions and diffusion processes at Ti/Au/Pt/Ti/SiC interfaces for as deposited and annealed at 575°C for 10 min structures. The distribution of the elements and the change
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e181e18214ddc01383615e2608bff530
https://doi.org/10.1016/s0169-4332(97)00290-0
https://doi.org/10.1016/s0169-4332(97)00290-0
Publikováno v:
Diamond and Related Materials. 6:1508-1511
We present static and microwave characterization of MESFETs processed on n + 4H-SiC wafers supplied by Cree Research. An eight-level technology including airbridge interconnections has been performed. Transistors with total gate width up to 6 mm and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3059bbd49cd7f246202c7c3b441a4061
https://doi.org/10.1016/s0925-9635(97)00059-9
https://doi.org/10.1016/s0925-9635(97)00059-9