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Autor:
Pierre Grech, Daniele Romanini, F. Bournazaud, C. Alibert, E. Hadji, Sophie Gaillard, Laurent Cerutti, Frédéric Genty, E. Picard, Arnaud Garnache
Publikováno v:
IEE Proceedings Optoelectronics
IEE Proceedings Optoelectronics, Institution of Engineering and Technology, 2002, pp.149. ⟨10.1049/ip-opt:20020267⟩
IEE Proceedings Optoelectronics, Institution of Engineering and Technology, 2002, pp.149. ⟨10.1049/ip-opt:20020267⟩
The fabrication of the first optically pumped GaSb-based VCSELs emitting in the 2-2.5 /spl mu/m is described. The typical structure was fabricated in two steps: a growth by molecular beam epitaxy (MBE) on GaSb substrate, and an evaporation of dielect
Autor:
Guilhem Boissier, D.A. Yarekha, C. Alibert, Pierre Grech, Aurore Vicet, Alexei N. Baranov, Yves Rouillard, A. Perona, Frédéric Genty
Publikováno v:
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Royal Society, The, 2001, 359 (1780), pp.581-597. ⟨10.1098/rsta.2000.0744⟩
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Royal Society, The, 2001, 359 (1780), pp.581-597. ⟨10.1098/rsta.2000.0744⟩
One of the main concerns in environmental issues is the accumulation of pollutant gases in the atmosphere. This gives rise to a need for convenient ways of detecting these gases. In this paper we review some fundamentals of a technique called ‘tuna
Autor:
A. Wilk, Pierre Grech, R. Blondeau, Alexei N. Baranov, Michel Garcia, André Joullié, Yvan Cuminal, G. Glastre, J.-C. Nicolas, C. Alibert
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 5:711-714
Ridge-waveguide laser diodes emitting near 2.38 /spl mu/m have been fabricated from GaInAsSb-GaSb type-II quantum-well (QW) structures grown by molecular beam epitaxy. These devices operated continuous-wave (CW) at room temperature, what is obtained
Autor:
André Joullié, Alexei N. Baranov, Yvan Cuminal, J.-C. Nicolas, Guilhem Boissier, Jean-Louis Lazzari, C. Alibert
Publikováno v:
Semiconductor Science and Technology. 11:1185-1188
GaSb-based heterostructures with strained-layer (x = 0.26 or x = 0.35) single quantum wells and cladding layers were grown by molecular beam epitaxy. The thickness of the GaInSb well was varied from 3.0 to 14.5 nm. Intense room-temperature electrolum
Autor:
Abdelmajid Salhi, Carlo Sirtori, A. Perona, C. Alibert, Xavier Marcadet, Yves Rouillard, Michel Garcia
Publikováno v:
IEEE Photonics Technology Letters. 16:1253-1255
Diode lasers emitting at 2.26 /spl mu/m, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm/sup 2/ for a 2-mm-long cavity. Outpu
Publikováno v:
physica status solidi (b). 180:K87-K91
Publikováno v:
Semiconductor Science and Technology. 16:936-938
Low-threshold laser emission at room temperature of a GaSb-based quantum well structure is reported in this paper. The optical and electrical confinement of the structure have been improved by inserting an aluminium oxide layer obtained by wet oxidat
Autor:
C. Alibert, C. Coriasso, Andre Regreny, S. Gaillard, Domenico Campi, C. Cacciatore, Bertrand Lambert
Publikováno v:
Europhysics Letters (EPL). 16:591-596
Using electroreflectance we report the first observation of the Franz-Keldysh oscillations originating from the band gap of a GaAs/Ga0.67Al0.33As short-period superlattice. The observed effect enables to measure the reduced effective mass in the dire
Publikováno v:
Materials Science and Engineering: B. 9:289-292
Using electroreflectance, we studied the electro-optic effects in semiconductor superlattices. These include the first systematic observation of superlatticer Franz-Keldysh oscillations, allowing the determination of a superlattice reduced mass. Spec