Zobrazeno 1 - 10
of 47
pro vyhledávání: '"C. Aktik"'
Autor:
M. Scarlete, Y. Awad, M. A. El Khakani, N. Camiré, Jaouhar Mouine, D. Brassard, C. Aktik, R. Smirani, M. Lessard
Publikováno v:
Thin Solid Films. 518:2738-2744
We report on the effect of thermal annealing on the structural and mechanical properties of amorphous SiC thin films prepared by means of a polymer-source chemical vapor deposition process. The chemical bondings of the a-SiC:H films were systematical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3841cf913aeab78847d133c2d256f3d3
https://doi.org/10.1016/j.tsf.2009.10.154
https://doi.org/10.1016/j.tsf.2009.10.154
Autor:
M. Lessard, R. Smirani, Y. Awad, N. Camiré, Hind A. Al-Abadleh, Jaouhar Mouine, M. A. El Khakani, M. Scarlete, C. Aktik
Publikováno v:
Surface and Coatings Technology. 204:539-545
The deposition of amorphous silicon carbonitride (a-SiCN:H) films has been successfully achieved through an in-house developed vapor-transport chemical vapor deposition (VT-CVD) technique in a nitrogenated atmosphere. Polydimethylsilane (PDMS) was us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b03e45caf6a29b4461795277fd4fe19a
https://doi.org/10.1016/j.surfcoat.2009.08.032
https://doi.org/10.1016/j.surfcoat.2009.08.032
Publikováno v:
Materials Chemistry and Physics. 104:350-355
Amorphous silicon carbide (a-SiC) thin films have been deposited onto a variety of substrates, including silicon, SiO2, Si3N4, Cr, Ti and refractory metal-coated silicon, by means of a polymer-source chemical vapor deposition (PS-CVD), at a substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3475848c254d5db9231b847b4b8d17cf
https://doi.org/10.1016/j.matchemphys.2007.03.030
https://doi.org/10.1016/j.matchemphys.2007.03.030
Publikováno v:
IEEE Transactions on Nuclear Science. 46:1603-1607
Gallium arsenide wafers were irradiated at room temperature with 15 MeV alpha particles and fluences in the range 10/sup 10/ to 10/sup 14/ /spl alpha//cm/sup 2/. This experiment extends the previous investigation of the same samples irradiated by 2.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c18b05638fdc2e02e77333b4602144d4
https://doi.org/10.1109/23.819127
https://doi.org/10.1109/23.819127
Publikováno v:
Journal of The Electrochemical Society. 145:2489-2493
Quasi-static capacitance measurements and deep level transient spectroscopy measurements were combined to analyze the density of interface states in N 2 O oxynitrides after constant-current Fowler-Nordheim injection from the silicon. Two defect level
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de30b4443f9cdb7ce71a3a069240410c
https://doi.org/10.1149/1.1838666
https://doi.org/10.1149/1.1838666
Publikováno v:
Journal of Applied Physics. 80:1364-1369
Gallium arsenide (GaAs) which was grown by metallorganic chemical vapor deposition, doped n with silicon to 2×1015 cm−3, and irradiated at room temperature with 1 MeV neutrons in the fluence range 1012 cm−2 to 3×1015 cm−2, has been studied by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e06a8eaa6564e8fe844d02ed81200eac
https://doi.org/10.1063/1.363023
https://doi.org/10.1063/1.363023
Publikováno v:
Solid-State Electronics. 39:507-510
We report on a new Se chemical passivation [(NH4)2S + Se] for GaAs surfaces. We compare our Se passivated surfaces with (NH4)2S + S [(NH4)2Sx] passivated surfaces by preparing Al-nGaAs Schottky diodes and submitting them to cumulative annealing treat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6de76f172b8f41cafd7dc64f2dfa9660
https://doi.org/10.1016/0038-1101(95)00190-5
https://doi.org/10.1016/0038-1101(95)00190-5
Publikováno v:
Canadian Journal of Physics. 70:893-897
The low-pressure metal-organic chemical vapour deposition (LPMOCVD) technique has been investigated previously as a growth method for compound semiconductors, offering the possibility of selective epitaxy and the potential advantage of better control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cf054796c809ede09349a3952e2f0a9
https://doi.org/10.1139/p92-141
https://doi.org/10.1139/p92-141
Publikováno v:
IEEE Transactions on Nuclear Science. 38:1145-1152
The spectral photoconductivity spectrum of lightly doped n GaAs exposed to electron and neutron irradiation is studied. From the temperature dependence of the photoconductivity, it is deduced that neutron irradiation induces a shallow donor level; ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2d560f1287345e4a5c1af21511119a7
https://doi.org/10.1109/23.124087
https://doi.org/10.1109/23.124087
Publikováno v:
Canadian Journal of Physics. 69:353-356
Si-doped GaAs epitaxial layers grown by metal-organic chemical vapour deposition exhibit substantial carrier density loss after rapid thermal annealing (RTA) at temperatures higher than 850 °C. Hall-effect, capacitance–voltage, deep-level transien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74e06f6d225c45aa9ac803c7bdd47961
https://doi.org/10.1139/p91-059
https://doi.org/10.1139/p91-059