Zobrazeno 1 - 10
of 36
pro vyhledávání: '"C. A. Glaser"'
Autor:
Andrew M. Armstrong, Trevor Smith, Greg Pickrell, Mary H. Crawford, C. E. Glaser, Andrew A. Allerman
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 318-323 (2021)
Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 $\mu \text{A}$ /cm2 at 1250 V), excellent forward characteristics (ideality factor ~1.6), and low specific on-resistance (1.1 $\text{m}
Autor:
A. A. Allerman, Vincent M. Abate, T. Smith, Andrew M. Armstrong, G.P. Pickrell, C. E. Glaser, Mary H. Crawford
Publikováno v:
Electronics Letters. 56:207-209
GaN p-n diodes were formed by selective area regrowth on freestanding GaN substrates using a dry etch, followed by post-etch surface treatment to reduce etch-induced defects, and subsequent regrowth into wells. Etched-and-regrown diodes with a 150 μ
Autor:
Andrew M. Armstrong, Mary H. Crawford, A. A. Allerman, Vincent M. Abate, Karen Charlene Cross, Greg Pickrell, C. E. Glaser
Publikováno v:
Journal of Electronic Materials. 48:3311-3316
Vertical c-plane GaN p–n diodes, where the p-GaN layer is formed by epitaxial regrowth using metal–organic chemical-vapor deposition, are reported. Current–voltage (I–V) performance similar to continuously grown p–n diodes is demonstrated,
Autor:
Ganesh Subramania, Michael L. Smith, Andrew T. Binder, Gregory Pickrell, Andrew A. Allerman, Lee Rashkin, C. E. Glaser, Todd C. Monson, James A. Cooper, Lee Gill, Vincent M. Abate, Jason C. Neely, Mary H. Crawford, Andrew M. Armstrong, Paul Sharps, Jeffrey Steinfeldt, Jonathan Bock, Ethan Scott, Jack Flicker, Jeramy R. Dickerson, Luke Yates, Robert Kaplar
Publikováno v:
ECS Meeting Abstracts. :1001-1001
Autor:
C. E. Glaser, Andrew M. Armstrong, Mary H. Crawford, A. A. Allerman, Greg Pickrell, Vincent M. Abate, J. Kempisty
Publikováno v:
Journal of Applied Physics. 126:145703
The impact of dry-etch-induced defects on the electrical performance of regrown, c-plane, GaN p-n diodes where the p-GaN layer is formed by epitaxial regrowth using metal-organic, chemical-vapor deposition was investigated. Diode leakage increased si
Publikováno v:
Journal of Biological Chemistry. 267:2325-2328
A unique form of transforming growth factor-beta (TGF-beta), TGF-beta 2.3 heterodimer, has been purified from bovine bone extract. TGF-beta 2.3 migrated as a single 25-kDa band by sodium dodecyl sulfate-polyacrylamide gel electrophoresis, whereas und
Publikováno v:
Journal of Biological Chemistry. 265:5024-5029
The complete amino acid sequence of bovine osteoinductive factor (OIF) was determined by automated Edman degradation of S-pyridylethylated bovine OIF and selected fragments. Cleavage with endoproteinase Lys-C, endoproteinase Glu-C, or endoproteinase
Autor:
C. G. Glaser
Publikováno v:
RöFo - Fortschritte auf dem Gebiet der Röntgenstrahlen und der bildgebenden Verfahren. 176
Autor:
T S, Hasselbring, C H, Glaser
Publikováno v:
The Future of children. 10(2)
Millions of students across the United States cannot benefit fully from a traditional educational program because they have a disability that impairs their ability to participate in a typical classroom environment. For these students, computer-based
Autor:
H, Li, C S, Raman, C B, Glaser, E, Blasko, T A, Young, J F, Parkinson, M, Whitlow, T L, Poulos
Publikováno v:
The Journal of biological chemistry. 274(30)
The crystal structures of the heme domain of human inducible nitric-oxide synthase (NOS-2) in zinc-free and -bound states have been solved. In the zinc-free structure, two symmetry-related cysteine residues form a disulfide bond. In the zinc-bound st