Zobrazeno 1 - 10
of 19
pro vyhledávání: '"C. A. Cockrum"'
Publikováno v:
Journal of Electronic Materials. 28:705-711
We review the rapid progress that has been made during the past three years in the heteroepitaxial growth of HgCdTe infrared detector device structures on Si substrates by molecular-beam epitaxy. The evolution of this technology has enabled the fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0bb4c4c6a3bfc12348734d0c167738
https://doi.org/10.1007/s11664-999-0058-2
https://doi.org/10.1007/s11664-999-0058-2
Autor:
G. M. Venzor, Rajesh D. Rajavel, O. K. Wu, M. S. Smith, T. J. de Lyon, J. A. Vigil, Steven L. Bailey, J. E. Jensen, I. Kasai, Scott M. Johnson, C. A. Cockrum, W. L. Ahlgren
Publikováno v:
Journal of Electronic Materials. 27:550-555
Molecular beam epitaxy has been employed to deposit HgCdTe infrared detector structures on Si(112) substrates with performance at 125K that is equivalent to detectors grown on conventional CdZnTe substrates. The detector structures are grown on Si vi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88c943f5dc75dc5cd821fa3333c9fe00
https://doi.org/10.1007/s11664-998-0014-6
https://doi.org/10.1007/s11664-998-0014-6
Autor:
T. J. de Lyon, Rajesh D. Rajavel, J. E. Jensen, Scott M. Johnson, O. K. Wu, C. A. Cockrum, G. M. Venzor
Publikováno v:
Journal of Electronic Materials. 25:1341-1346
High-quality, single-crystal epitaxial films of CdTe(112)B and HgCdTe(112)B have been grown directly on Si(112) substrates without the need for GaAs interfacial layers. The CdTe and HgCdTe films have been characterized with optical microscopy, x-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cef6884ba4de01e62e3b237919ec352
https://doi.org/10.1007/bf02655030
https://doi.org/10.1007/bf02655030
Autor:
Scott M. Johnson, O. K. Wu, C. A. Cockrum, Rajesh D. Rajavel, Peter D. Brewer, D. M. Jamba, G. M. Venzor, J. E. Jensen, John A. Roth
Publikováno v:
Journal of Electronic Materials. 25:1411-1415
A robust process has been developed for the reproducible growth of in-situ doped Hg1−xCdxTe:As alloys by molecular beam epitaxy. Net hole concentrations in excess of 5 x 1017 cm−3, with peak mobilities >200 cm2/Vs were measured in Hg0.74Cd0.26Te:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::452e5010433e41a5e3d069d7542943cc
https://doi.org/10.1007/bf02655043
https://doi.org/10.1007/bf02655043
Autor:
L. M. Ruzicka, Bonnie A. Baumgratz, Scott M. Johnson, William J. Hamilton, C. A. Cockrum, O. K. Wu, T. Tung, F. I. Gesswein, T. J. de Lyon, John A. Roth
Publikováno v:
Journal of Electronic Materials. 24:467-473
Direct epitaxial growth of high-quality 100lCdZnTe on 3 inch diameter vicinal {100}Si substrates has been achieved using molecular beam epitaxy (MBE); a ZnTe initial layer was used to maintain the {100} Si substrate orientation. The properties of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::963068ec97890255e9276a701482d6c8
https://doi.org/10.1007/bf02657949
https://doi.org/10.1007/bf02657949
Autor:
Scott M. Johnson, K. Kosai, C. A. Cockrum, Owen K. Wu, G. S. Kamath, Jeffrey M. Peterson, George R. Chapman, D. M. Jamba
Publikováno v:
Journal of Electronic Materials. 24:423-429
HgCdTe MBE technology is becoming a mature growth technology for flexible manufacturing of short-wave, medium-wave, long-wave, and very long-wave infrared focal plane arrays. The main reason that this technology is getting more mature for device appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e54a2f53d38cdddd01c492d0797a0a6
https://doi.org/10.1007/bf02657943
https://doi.org/10.1007/bf02657943
Publikováno v:
Journal of The Electrochemical Society. 141:2888-2893
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06d6827132a9df57098129f7f5f16850
https://doi.org/10.1149/1.2059251
https://doi.org/10.1149/1.2059251
Autor:
Scott M. Johnson, C. A. Cockrum, R. F. Risser, J. A. Vigil, W. J. Hamilton, W. H. Konkel, T. Tung, J. M. Myrosznyk, J. B. James, W. L. Ahlgren, M. H. Kalisher
Publikováno v:
Journal of Electronic Materials. 22:835-842
Large-area HgCdTe 480×640 thermal-expansion-matched hybrid focal plane arrays were achieved by substituting metalorganic chemical vapor deposition (MOCVD)-grown CdZnTe/GaAs/Si alternative substrate in place of bulk CdZnTe substrates for the growth o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b63abda06363e6988f248d349086256
https://doi.org/10.1007/bf02817494
https://doi.org/10.1007/bf02817494
Publikováno v:
Applied Physics Letters. 66:2119-2121
High crystalline quality epitaxial CdTe(112)B/ZnTe films were deposited by molecular‐beam epitaxy directly onto vicinal Si(112) substrates, without use of GaAs interfacial layers. The films were characterized with x‐ray diffraction, optical micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf1102df6d99d55699d2a7dd6207432c
https://doi.org/10.1063/1.113922
https://doi.org/10.1063/1.113922
Publikováno v:
Applied Physics Letters. 63:818-820
Epitaxial structures of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular‐beam epitaxy onto Si(100) substrates misoriented from 0° to 8° towards the [011] direction. The films were characterized with x‐ray diffraction, photol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79d70b1780a567826c2bea5019cbda21
https://doi.org/10.1063/1.109918
https://doi.org/10.1063/1.109918