Zobrazeno 1 - 10
of 45
pro vyhledávání: '"C.‐D. Lien"'
Publikováno v:
Applied Physics A Solids and Surfaces. 35:47-50
Three kinds of samples were used to form Co suicides by thermal annealing: firstly, a Co film of about 370 A thick, evaporated on a (100) single crystal Si (Si c /Co); secondly, an evaporated boron-containing Si (Si e (B)) layer on the top of the fir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac98a8fbfcfdc06534a5e05126359b43
https://doi.org/10.1007/bf00620299
https://doi.org/10.1007/bf00620299
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:2284-2288
2 MeV ^(4)He^+ backscattering spectrometry and x‐ray diffraction have been used to study Hf Si_2 formed by thermal annealing of a Hf Si film on evaporated Si (Sie) at temperatures between 575 and 650 °C. A laterally uniform layer of Hf Si_2 forms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e24234d92dfe6dc3b0ba71048dd7b2e
https://doi.org/10.1116/1.572909
https://doi.org/10.1116/1.572909
Publikováno v:
Applied Physics A Solids and Surfaces. 36:153-157
We have investigated the reaction of a thin Co film with a (100) Si (Si c ) or an evaporated Si (Si e , which is amorphous) substrate during thermal annealing. On either substrate, Co2Si and CoSi form simultaneously and the growth of each phase has a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea1153dc871945d5baba92366325ead3
https://doi.org/10.1007/bf00624936
https://doi.org/10.1007/bf00624936
Publikováno v:
Thin Solid Films. 104:235-242
We investigated the redistribution of oxygen after a thermally induced reaction of an evaporated chromium film deposited on an Si substrate. To monitor the redistribution, 18O was implanted in the metal film or in the silicon substrate. Depth profile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1882914541e7659ac3fdc42f1fc974e
https://doi.org/10.1016/s0040-6090(83)80002-9
https://doi.org/10.1016/s0040-6090(83)80002-9
Publikováno v:
physica status solidi (a). 72:399-404
Backscattering spectrometry is used to investigate the depth dependence of NiSi atomic mixing induced by 300 keV Xe+ ions. Nickel films with thicknesses of 40, 64, 68, and 97 nm are deposited on 〈100〉 Si substrates and irradiated at various tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bdf464f4fb18fd50d88cb654aa057fb
https://doi.org/10.1002/pssa.2210720141
https://doi.org/10.1002/pssa.2210720141
Autor:
M. A. Nicolet, C. D. Lien
Publikováno v:
Journal of Applied Physics. 55:4187-4193
A mathematical model is constructed to interpret the profiles of radioactive (^31)Si tracers in a computer simulation proposed by R. Pretorius and A. P. Botha [Thin Solid Films 91, 99 (1982)]. This model assumes that only Si moves in the silicide, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1f1e8ca99c95cf350065ecfe8b8bc96
https://doi.org/10.1063/1.333037
https://doi.org/10.1063/1.333037
Publikováno v:
Thin Solid Films. 136:69-76
Near-noble metal (nickel, platinum and palladium) films were evaporated onto silicon substrates, the surfaces of which were slightly oxidized in an oxygen plasma. The samples were irradiated with Si + to different doses to break up the interfacial ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c306592763bf9a09c5b179fc415ec0bd
https://doi.org/10.1016/0040-6090(86)90109-4
https://doi.org/10.1016/0040-6090(86)90109-4
Publikováno v:
Journal of Applied Physics. 57:227-231
A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 〈111〉 and 〈100〉 Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e255c40c280e4718d720b6e830a0ef4d
https://doi.org/10.1063/1.334793
https://doi.org/10.1063/1.334793
Publikováno v:
Physica Status Solidi (a). 81:123-128
2 MeV 4He+ backscattering spectrometry and CuKα X-ray diffraction are used to study Nisi2, formed by thermal annealing from Nisi and evaporated Si. Uniform layers of Nisi, are formed at temperatures between 350 and 425 °C. The thickness of Nisi, fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a071773da0df0a089ac45bb98b14856
https://doi.org/10.1002/pssa.2210810111
https://doi.org/10.1002/pssa.2210810111
Autor:
C.‐D. Lien
Publikováno v:
Journal of Applied Physics. 57:4554-4559
A mathematical model is constructed to interpret the profiles of radioactive Si tracers during silicide formation. This model assumes that only Si moves in the silicide during silicide formation and that the moving Si diffuses in the Si sublattice of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b262d0eeeaa397bbcd25937824d44182
https://doi.org/10.1063/1.335359
https://doi.org/10.1063/1.335359