Zobrazeno 1 - 1
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pro vyhledávání: '"C-V characteritics"'
Autor:
福山大学工学部電子・電気工学科, Faculty of Engineering, Fukuyama University
Publikováno v:
福山大学工学部紀要. 25:1-6
High-frequency capacitance-voltage (C-V) characteristics of a buried-channel MOS capacitor have been measured and analyzed. The C-V characteristics, including transient behavior, of a buried-channel MOS capacitor that has a counter-doped p layer at t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::414fcd2e41cb186db813fa94d089956a
http://id.nii.ac.jp/1064/00008065/
http://id.nii.ac.jp/1064/00008065/
