Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

Autor: Khimmatali JURAEV, Mardonbek KHAJIEV, Aleksandr KUTLIMRATOV, Abdumirkhakim AKHMEDOV, Dilmurad SAIDOV

Publikováno v: Medžiagotyra (2024)

In this paper, the electrophysical characteristics of the 4H-SiC p-n junction created by low-temperature diffusion of aluminum were studied. Current-voltage (I-V) characteristics are analysed, and the current transport mechanisms in 4H-SiC p-n juncti

Externí odkaz: https://doaj.org/article/4a67bb59a428486092dd456801af6c0d

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Capacitive Micromachined Ultrasonic Transducers (CMUTs) for Underwater Imaging Applications

Autor: Jinlong Song, Chenyang Xue, Changde He, Rui Zhang, Linfeng Mu, Juan Cui, Jing Miao, Yuan Liu, Wendong Zhang

Publikováno v: Sensors, Vol 15, Iss 9, Pp 23205-23217 (2015)

A capacitive micromachined ultrasonic transducer structure for use in underwater imaging is designed, fabricated and tested in this paper. In this structure, a silicon dioxide insulation layer is inserted between the top electrodes and the vibration

Externí odkaz: https://doaj.org/article/30baa87075164fa68dc825113883fa60

Growth and Characterization of MFS and MFIS Preliminary Prototype Device with Ba0.7(Sr)0.3TiO3 Thin Film for Non-volatile Memory Device Application

Autor: Htet Htet Nwe, Maung, Yin Maung, Win, Than Than

Ba1-x(Sr)xTiO3 (x=0.3mol) (BST) powder was formulated and prepared by solid state mixed oxide route. The phase evaluation and structural properties of BST powder were studied by X-ray Diffractometer (XRD) with the Bragg angle between 10° to 70°. Th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76ae0a4d7870861822232d92ee372845

Doping profile extraction in thin SOI films: application to A2RAM

Autor: Maryline Bawedin, S. Cristoloveanu, F. Tcheme Wakam, Sebastien Martinie, J.-Ch. Barbe, Gerard Ghibaudo, Joris Lacord

Publikováno v: EuroSOI-ULIS 2018
EuroSOI-ULIS 2018, Mar 2018, Granada, Spain
Solid-State Electronics
Solid-State Electronics, Elsevier, 2019, 159, pp.3-11. ⟨10.1016/j.sse.2019.03.038⟩
2018 EUROSOI-ULIS Proceedings
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.1-4, ⟨10.1109/ULIS.2018.8354339⟩
Solid-State Electronics, 2019, 159, pp.3-11. ⟨10.1016/j.sse.2019.03.038⟩
HAL

session 1: Fabrication and Process characterization; International audience; We propose for the first time a method based on C-V measurement to extract the bridge doping profile which governs the A2RAM performances. Assessed with TCAD simulation and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a578c67814303936f889e5d5f31d147c
https://hal-cea.archives-ouvertes.fr/cea-02270895