Zobrazeno 1 - 10
of 40
pro vyhledávání: '"C W, Teng"'
Publikováno v:
International Journal of Information and Education Technology. 5:84-88
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13284cf8ee17d4904f578804a34f1b12
https://doi.org/10.7763/ijiet.2015.v5.481
https://doi.org/10.7763/ijiet.2015.v5.481
Publikováno v:
International Journal of Information and Education Technology. 5:100-104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f91823b02b234f661f3b02c1036b1312
https://doi.org/10.7763/ijiet.2015.v5.484
https://doi.org/10.7763/ijiet.2015.v5.484
Publikováno v:
Acta Applicandae Mathematicae. 108:687-696
We give an operator algebraic formulation of the stabilizer formalism for error correction in quantum computing. The approach relies on an analysis of commutant structures, and gives a natural extension of the classic stabilizer formalism to the gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9995f6bd477a32be9af0d8528b02b799
https://doi.org/10.1007/s10440-008-9421-1
https://doi.org/10.1007/s10440-008-9421-1
Autor:
K. Y. Cheng, Chii Chang Chen, Cheng-Chung Lee, W. T. Liu, Kou-Chen Liu, C. W. Teng, Li-Chyong Chen, Y. H. Lu
Publikováno v:
Japanese Journal of Applied Physics. 45:3742-3745
Top emission polymer light-emitting devices (PLEDs) with different heat treatments are investigated. Due to the high work function of an indium–tin-oxide (ITO) cathode as a top electrode, LiF is employed as an interlayer to increase electron inject
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b7a455ca87db609a8e01c28b3a9b714
https://doi.org/10.1143/jjap.45.3742
https://doi.org/10.1143/jjap.45.3742
Autor:
V. Sakhrani, John J. Hren, Jerome J. Cuomo, R. C. Sanwald, Robert J. Nemanich, M. B. McLaurin, Minseo Park, R. M. Kolbas, C. W. Teng
Publikováno v:
Journal of Applied Physics. 89:1130-1137
The effect of hydrogen dilution on the optical properties of a wide band gap amorphous semiconductor (a-Si:C:H) was investigated. The samples were prepared by glow discharge decomposition of tetramethylsilane and were characterized primarily by optic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d05745bb78c39f1734e088fcf4aef6c7
https://doi.org/10.1063/1.1332421
https://doi.org/10.1063/1.1332421
Publikováno v:
Review of Scientific Instruments. 68:4180-4183
We present here the design of a novel and simple setup for measuring the thermal conductivity of thin films. This method is based on the well known principle of phase lag of a traveling thermal wave. In the present setup, the traveling thermal wave i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44e0ea80a84bbd319b2494227d5ba21a
https://doi.org/10.1063/1.1148364
https://doi.org/10.1063/1.1148364
Publikováno v:
Applied Physics Letters. 78:1688-1690
We have studied the electrical and photoluminescence (PL) properties of a Si delta-doped GaN layer grown by metalorganic chemical vapor deposition. The Hall mobility and electron sheet concentration are 726 cm2/V s and 1.9×1012 cm−2, respectively,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dbd87d1f3fd283d3d4531350ffde6e7
https://doi.org/10.1063/1.1353836
https://doi.org/10.1063/1.1353836
Autor:
C. W. Teng, K. M. Hassan, R. M. Kolbas, Anubha Sharma, Jagdish Narayan, John F. Muth, Alex Kvit
Publikováno v:
Applied Physics Letters. 76:43-45
Alternating layers of Ge quantum dots embedded in either Al2O3 or AlN matrices were deposited on sapphire substrates by pulsed-laser deposition. The characteristics of the dots are shown to be independent of the surrounding matrix. The dots size (73,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7de3ebb9c38fa0f75c934600392f38e
https://doi.org/10.1063/1.125650
https://doi.org/10.1063/1.125650
Autor:
C. W. Teng, John F. Muth, Ajanta Sharma, Jagdish Narayan, O. W. Holland, R. M. Kolbas, Alexander Kvit, Chunming Jin
Publikováno v:
Applied Physics Letters. 75:3327-3329
The optical and structural properties of high-quality single-crystal epitaxial MgZnO films deposited by pulsed-laser deposition were studied. In films with up to ∼36 at. % Mg incorporation, we have observed intense ultraviolet band edge photolumine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7139c5bc22ecd314c63675755abef40a
https://doi.org/10.1063/1.125340
https://doi.org/10.1063/1.125340
Publikováno v:
Applied Physics Letters. 75:1222-1224
We have fabricated Ge nanostructures buried in a matrix of AlN grown on Si(111) by pulsed laser deposition at the substrate temperature of 500 °C. The characterization of these structures was performed using high-resolution transmission electron mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::702b719dd96a141ce1e491509ae4463d
https://doi.org/10.1063/1.124648
https://doi.org/10.1063/1.124648