High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes

Autor: Tin S. Cheng, Alex Summerfield, Christopher J. Mellor, Andrei N. Khlobystov, Laurence Eaves, C. Thomas Foxon, Peter H. Beton, Sergei V. Novikov

Publikováno v: Materials, Vol 11, Iss 7, p 1119 (2018)

Hexagonal boron nitride (hBN) has attracted a great deal of attention as a key component in van der Waals (vdW) heterostructures, and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular be

Externí odkaz: https://doaj.org/article/47e6c6e2d1154d3cb77ddf9743192e43

Lattice-Matched Epitaxial Graphene Grown on Boron Nitride

Autor: Emily Stapleton, Nathan L. Goodey, Takashi Taniguchi, Andrew Davies, Alex Summerfield, Christopher J. Mellor, Peter H. Beton, Kenji Watanabe, C. Thomas Foxon, Laurence Eaves, James Wrigley, Andrei N. Khlobystov, J.D. Albar, Sergei V. Novikov, James C. Thomas, Vladimir V. Korolkov, Tin S. Cheng

Publikováno v: Nano Letters. 18:498-504

Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, lattice-matched graphene ca

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff43c7e7986da33a465efd25e112c87d
https://doi.org/10.1021/acs.nanolett.7b04453

Moiré-Modulated Conductance of Hexagonal Boron Nitride Tunnel Barriers

Autor: Alex, Summerfield, Aleksey, Kozikov, Tin S, Cheng, Andrew, Davies, Yong-Jin, Cho, Andrei N, Khlobystov, Christopher J, Mellor, C Thomas, Foxon, Kenji, Watanabe, Takashi, Taniguchi, Laurence, Eaves, Kostya S, Novoselov, Sergei V, Novikov, Peter H, Beton

Publikováno v: Nano Letters

Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hB

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::c5cbb9947ca5e024d840bd3d615c078e
https://pubmed.ncbi.nlm.nih.gov/29913062

Transmission electron microscopy of indium gallium nitride nanorods grown by molecular beam epitaxy

Autor: Richard F. Webster, C. Thomas Foxon, Sergei V. Novikov, David Cherns

Publikováno v: Webster, R F, Cherns, D, Novikov, S V & Foxon, C T 2014, ' Transmission electron microscopy of indium gallium nitride nanorods grown by molecular beam epitaxy ', physica status solidi (c), vol. 11, no. 3-4, pp. 417-420 . https://doi.org/10.1002/pssc.201300454

This paper demonstrates the growth of InGaN nanorods and lateral growth over nanorod arrays using molecular beam epitaxy. It is shown that nitrogen rich growth conditions result in a nanorod array and that, by changing to metal rich conditions, later

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66cfbf90c27ba9a88f59d818d7a7573d
https://doi.org/10.1002/pssc.201300454

Anion modulation epitaxy (AME), an alternative growth strategy for group III‐nitrides

Autor: Anthony J. Kent, C.R. Staddon, C. Thomas Foxon, R. P. Campion, L. E. Goff

Publikováno v: physica status solidi c. 9:530-533

In this paper we report a new strategy for growth of group III-nitrides by Plasma-Assisted Molecular Beam Epitaxy (PA-MBE), which we term Anion Modulation Epitaxy (AME). In this modified growth method, the nitrogen flux is interrupted periodically to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::615d1de2bc4e1a50d8d2af755bd27b06
https://doi.org/10.1002/pssc.201100311