Zobrazeno 1 - 10
of 30
pro vyhledávání: '"C Tarun"'
Publikováno v:
2022 International Conference on Inventive Computation Technologies (ICICT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb127ab9d98699272004a40894964fcb
https://doi.org/10.1109/icict54344.2022.9850953
https://doi.org/10.1109/icict54344.2022.9850953
Publikováno v:
AIP Advances, Vol 1, Iss 2, Pp 022105-022105-7 (2011)
Zinc oxide is a promising material for blue and UV solid-state lighting devices, among other applications. Nitrogen has been regarded as a potential p-type dopant for ZnO. However, recent calculations [Lyons, Janotti, and Van de Walle, Appl. Phys. Le
Externí odkaz:
https://doaj.org/article/a05d44559f754ced96aeacccd0372440
Publikováno v:
MRS Proceedings. 1675:87-91
Strontium titanate (SrTiO3) has novel properties, including a large temperature-dependent dielectric constant, and can be doped to make it metallic or even superconducting. The origin of conductivity observed at the SrTiO3/LaAlO3 interface is a topic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6135090867822843dee000f0061db4d5
https://doi.org/10.1557/opl.2014.800
https://doi.org/10.1557/opl.2014.800
Publikováno v:
Journal of Materials Research. 27:2190-2198
Oxide semiconductors exhibit a range of physical properties and have potential optical, electronic, and energy applications. Transparent conducting oxides (TCOs) are currently used in products such as flat-panel displays. The prevailing n-type conduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17944d5ea36aa70f0eeade11195831d8
https://doi.org/10.1557/jmr.2012.137
https://doi.org/10.1557/jmr.2012.137
Publikováno v:
MRS Proceedings. 1494:3-12
Zinc oxide (ZnO) is a semiconductor that emits bright UV light, with little wasted heat. This intrinsic feature makes it a promising material for energy-efficient white lighting, nano-lasers, and other optical applications. For devices to be competit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0ad29b823a51bb97423af0ccd11981a
https://doi.org/10.1557/opl.2012.1574
https://doi.org/10.1557/opl.2012.1574
Autor:
N. X. Randall, David F. Bahr, E. W. Osborne, M. G. Norton, Mohamad B. Zbib, M. C. Tarun, R. Nair
Publikováno v:
Journal of Materials Science. 45:1560-1566
Polysilicon granular beads grown via a fluidized bed reactor, a feedstock for silicon solar cell production, were annealed, sectioned, and indented using a combination of nanoindentation and microhardness testing to determine the mechanical response
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8815d316e8dc000770eb445be675ec7f
https://doi.org/10.1007/s10853-009-4124-1
https://doi.org/10.1007/s10853-009-4124-1
Publikováno v:
Physica B: Condensed Matter. 404:4810-4812
Zinc oxide (ZnO) is a wide band gap II–VI semiconductor with optical, electronic, and mechanical applications. Nitrogen is a promising acceptor dopant. Nitrogen–hydrogen (N–H) complexes were introduced into ZnO during chemical vapor transport (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7b74dc77fd907e19c29729241c967e7
https://doi.org/10.1016/j.physb.2009.08.238
https://doi.org/10.1016/j.physb.2009.08.238
Autor:
M. C. Tarun, Matthew D. McCluskey
Publikováno v:
AIP Conference Proceedings.
Strontium titanate (SrTiO3) is often used as a substrate for oxide thin films such as high-temperature superconductors. It has the perovskite structure and an indirect band gap of 3.25 eV. Our prior work showed that hydrogen impurities form a defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb3da0fe35433c29be6b5c8e093a90e1
https://doi.org/10.1063/1.4865661
https://doi.org/10.1063/1.4865661
Autor:
Bruno K. Meyer, Jan Eric Stehr, M. C. Tarun, Jan M. Philipps, Irina Buyanova, Matthew D. McCluskey, Detlev M. Hofmann
Electron Paramagnetic Resonance was used to study N2-centers in ZnO, which show a 5-line spectrum described by the hyperfine interaction of two nitrogen nuclei (nuclear spin I = 1, 99.6% abundance). The recharging of this center exhibits two steps, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfd51bde64236f3c1e800e7ea9434e8f
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109926
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109926
Autor:
Gary S. Collins, Farida Selim, C. R. Varney, Matthew D. McCluskey, Michael C. Rowe, M. C. Tarun
Publikováno v:
Physical Review B. 88
A charge compensation mechanism is proposed for cation vacancy defects in complex oxides based on positron lifetime measurements, infrared spectroscopy, and composition analysis. Defects were characterized in samples of yttrium aluminum garnet grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bf79ec7487b4c3cbf1ee1d8b372e195
https://doi.org/10.1103/physrevb.88.174102
https://doi.org/10.1103/physrevb.88.174102