Zobrazeno 1 - 10
of 2 180
pro vyhledávání: '"C T, Nelson"'
Autor:
Q. Li, C. T. Nelson, S.-L. Hsu, A. R. Damodaran, L.-L. Li, A. K. Yadav, M. McCarter, L. W. Martin, R. Ramesh, S. V. Kalinin
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Flexoelectric coupling between strain gradients and polarization influences the physics of ferroelectric devices but it is difficult to directly probe its effects. Here, Li et al. use principal component analysis to compare STEM images with phase-fie
Externí odkaz:
https://doaj.org/article/5c2afb0ab0ce462a92da7d13496d55bb
Autor:
D. Y. Wan, Y. L. Zhao, Y. Cai, T. C. Asmara, Z. Huang, J. Q. Chen, J. Hong, S. M. Yin, C. T. Nelson, M. R. Motapothula, B. X. Yan, D. Xiang, X. Chi, H. Zheng, W. Chen, R. Xu, Ariando, A. Rusydi, A. M. Minor, M. B. H. Breese, M. Sherburne, M. Asta, Q-H Xu, T Venkatesan
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
Metallic oxide SrNbO3has been identified as an efficient hydrogen evolution photocatalyst. Here, Venkatesan and co-workers show that its visible light absorption stems from plasmon resonance, thanks to its large carrier density (despite a large 4.1 e
Externí odkaz:
https://doaj.org/article/0a18e1ec0c5142f480ec53a477e8a1e8
Autor:
A K, Yadav, C T, Nelson, S L, Hsu, Z, Hong, J D, Clarkson, C M, Schlepütz, A R, Damodaran, P, Shafer, E, Arenholz, L R, Dedon, D, Chen, A, Vishwanath, A M, Minor, L Q, Chen, J F, Scott, L W, Martin, R, Ramesh
Publikováno v:
Nature. 534(7605)
Autor:
Lawrence J. Overzet, Matthew Goeckner, Isabel C. Estrada-Raygoza, C. T. Nelson, Chin-Wook Chung, Gabriel Padron Wells, P. L. Stephan Thamban
Publikováno v:
Plasma Processes and Polymers. 10:119-135
Autor:
Jeremy D Weiss, C. T. Nelson, M D Biegalski, Xiaoqing Pan, Chung Wung Bark, Chiara Tarantini, C. B. Eom, Sanghan Lee, Eric E. Hellstrom, David C. Larbalestier, Yifan Zhang, Anatolii Polyanskii, Jianyi Jiang
Publikováno v:
IEEE Transactions on Applied Superconductivity. 21:2882-2886
In our previous report, we demonstrated the growth of high-quality epitaxial Co-doped Ba(Fe1-xCox)2As2 (Ba-122) thin films using single crystalline SrTiO3 (STO) templates on (La,Sr)(Al,Ta)O3 (LSAT) substrates with pulsed laser deposition (PLD). Here,
Autor:
Yifan Zhang, W. Tian, Y. Che, X.H. Pan, Wei Guo, D. G. Schlom, Xiaoqing Pan, Z.Z. Ye, B. Liu, C. T. Nelson
Publikováno v:
Chemical Physics Letters. 485:363-366
Zn1−xMgxO thin films are epitaxially grown on (1 1 1) Si substrates using intervening epitaxial Lu2O3 buffer layers by pulsed laser deposition. Lu2O3 buffer layer on Si substrate is essential to the Zn1−xMgxO epitaxial growth. X-ray diffraction,
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:631-642
In a typical plasma tool, both etch and deposition occur simultaneously. Extensive experimental measurements are used to help develop a general model of etch and deposition processes. This model employs reaction probabilities, or surface averaged cro
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:193-208
The densities of radicals and neutrals in fluorocarbon (FC) plasmas have been investigated in an inductively coupled plasma system to understand the predominant gain and loss mechanisms of dissociative products and their interaction with chamber surf
Autor:
Ho Won Jang, Chad M. Folkman, Seung Hyub Baek, Yanbin Chen, Xiaoqing Pan, Rasmi R. Das, Ramamoorthy Ramesh, Padraic Shafer, C. T. Nelson, Chang-Beom Eom, Daniel Ortiz
Publikováno v:
Advanced Materials. 21:817-823
Adv. Mater. 2009, 21, 817–823 2009 WILEY-VCH Verlag Gm Multiferroic BiFeO3 has attracted great interest due to its promising application tomagnetoelectric devices. In addition, the high remanent polarization and piezoelectric response of BiFeO3 thi
Publikováno v:
Plasma Sources Science and Technology. 16:813-821
This paper examines the complex nature of highly polymerizing fluorocarbon plasmas. An inductively coupled modified GEC reference cell is used to look at process rates on SiO2, p-Si and Si3N4 samples using various chamber geometries and gas chemistri