Zobrazeno 1 - 10
of 65
pro vyhledávání: '"C Socquet-Clerc"'
Autor:
A. Jannaud, Marianne Coig, J. Garrione, Mathieu Bernard, Marie-Claire Cyrille, F. Al Mamun, F. Mazen, B. Hemard, T. Magis, C. Socquet-Clerc, Gabriele Navarro, V. Meli, Guillaume Bourgeois, Emmanuel Nolot, Francois Andrieu, N. Bernier, J. P. Barnes, Eugénie Martinez, N. Castellani, C. Charpin, F. Milesi, C. Sabbione, F. Laulagnet
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, Elsevier, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, Elsevier, In press, ⟨10.1016/j.microrel.2021.114221⟩
International audience; In this paper we investigate the effect of Carbon ion implantation in Ge$_2$ Sb$_2$ Te$_5$ based Phase-Change Memory (PCM) targeting reliability improvement in 4kb memory arrays. We show how ion implantation by beam line allow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70e57736ecd498b80119d3cb144b5aed
https://hal-cea.archives-ouvertes.fr/cea-03373794
https://hal-cea.archives-ouvertes.fr/cea-03373794
Autor:
Leif Katsuo Oxenløwe, H. El Dirani, Minhao Pu, C. Socquet-Clerc, Christelle Monat, Xavier Letartre, Sebastien Kerdiles, J. Laegsgaard, Marco Casale, Corrado Sciancalepore, A. N. Kamel, Kresten Yvind
Publikováno v:
GFP 2019-IEEE 16th International Conference on Group IV Photonics
GFP 2019-IEEE 16th International Conference on Group IV Photonics, Aug 2019, Singapore, Singapore. pp.1-2, ⟨10.1109/GROUP4.2019.8926117⟩
GFP 2019-IEEE 16th International Conference on Group IV Photonics, Aug 2019, Singapore, Singapore. pp.1-2, ⟨10.1109/GROUP4.2019.8926117⟩
International audience; We demonstrate for the first time continuous-wave coherent 392-nm-light UV-emission using an integrated CMOS-compatible silicon nitride resonator pumped at 1570 nm.
Autor:
C. Socquet-Clerc, J. Sandrini, Michel Frei, Gabriele Navarro, Nicolas Bernier, Emmanuel Nolot, Lavinia Nistor, T. Magis, J. Garrione, Marie-Claire Cyrille, O. Cueto, Mathieu Bernard, Etienne Nowak, F. Fillot, F. Laulagnet, Guillaume Bourgeois, Mahendra Pakala, N. Castellani, C. Sabbione
Publikováno v:
2019 IEEE 11th International Memory Workshop (IMW).
In this paper we present the engineering of highly Sb-rich Ge-Sb-Te phase-change materials integrated in state-of-the-art Phase-Change Memory devices in 4Kb arrays. Thanks to an innovative composition called “delta” or $\delta$ -GST, high speed p
Autor:
A. N. Kamel, H. E. Dirani, M. Casale, S. Kerdiles, C. Socquet-Clerc, M. Pu, L. K. Oxenløwe, K. Yvind, J. Lægsgaard, C. Sciancalepore
Publikováno v:
Conference on Lasers and Electro-Optics.
Autor:
Emmanuel Nolot, G. Molas, J. Garrione, Guillaume Bourgeois, G. Navarro, Pierre Noé, Etienne Nowak, N. Castellani, T. Magis, M.-C. Cyrille, Gilbert Sassine, C. Socquet-Clerc, Mathieu Bernard, A. Verdy
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM)
In this paper, we investigate the impact of Ovonic Threshold Switching (OTS) selector electrical parameters, such as the threshold and the holding current, on the reliability of the reading operation in 1S1R memory devices. Through physico-chemical a
Autor:
Houssein El Dirani, Sebastien Kerdiles, Leif Katsuo Oxenløwe, A. N. Kamel, Marco Casale, C. Socquet-Clerc, Minhao Pu, Kresten Yvind, Corrado Sciancalepore
Publikováno v:
Conference on Lasers and Electro-Optics.
We present frequency comb generation in crack- and annealing-free Si 3 N 4 microresonator chips fabricated using novel Si-photonics compatible processing.
Publikováno v:
IEEE Transactions on Applied Superconductivity. 21:102-106
NbN-TaN-Nb(Ti)N non-hysteretic SNS Josephson junctions with TaXN barriers tuned through nitrogen content at metal-insulator transition have been produced in a reliable way with characteristic voltage RNIC above 1.5 mV at 9 K. Barriers are typically 7
Autor:
Pierre Ranson, M Volatier, Pascal Brault, Xavier Mellhaoui, Remi Dussart, Philippe Lefaucheux, C Socquet-Clerc, Thomas Tillocher
Publikováno v:
Journal of Physics D: Applied Physics. 38:3395-3402
An inductively coupled SF6/O2 plasma is used to form a columnar microstructure (CMS) on silicon samples cooled at very low temperature (~ −100 °C). The formation of this CMS is studied as a function of bias voltage, temperature, RF power and gas p
Conference
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Akademický článek
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