Zobrazeno 1 - 10
of 81
pro vyhledávání: '"C R Müller"'
Publikováno v:
New Journal of Physics, Vol 21, Iss 9, p 093047 (2019)
Coherent beam combining refers to the process of generating a bright output beam by merging independent input beams of individually diffusing relative phases by locking them to each other. We report the first quantum mechanical noise limit calculatio
Externí odkaz:
https://doaj.org/article/04a6df309db7406daa3e1a88ec741865
Autor:
C R Müller, Ch Marquardt
Publikováno v:
New Journal of Physics, Vol 17, Iss 3, p 032003 (2015)
The impossibility of perfectly discriminating non-orthogonal quantum states imposes far-reaching consequences both on quantum and classical communication schemes. We propose and numerically analyze an optimized quantum receiver for the discrimination
Externí odkaz:
https://doaj.org/article/1974110d1a1d4583b7daa02ed569bfa6
Publikováno v:
New Journal of Physics, Vol 14, Iss 8, p 083009 (2012)
We propose and experimentally demonstrate a near-optimal discrimination scheme for the quadrature phase shift keying (QPSK) protocol. We show in theory that the performance of our hybrid scheme is superior to the standard scheme—heterodyne detectio
Externí odkaz:
https://doaj.org/article/cbc06cceb7c64b638d038f43af31abd0
Autor:
Joachim Weis, Benedikt Schoser, J. Wanschitz, Kai Michael Rösler, Marcus Deschauer, C. R. Müller-Reible, Stephan Zierz
Publikováno v:
Aktuelle Neurologie. 43:599-607
Hintergrund: Die Diagnosestellung von Myopathien im Erwachsenenalter ist aufgrund der klinischen und genetischen Heterogenitat schwierig. Diese Leitlinie soll helfen, bei erwachsenen Patienten mit Muskelerkrankungen gezielt eine Diagnose zu stellen u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05b2abeb073bd1576b4942ee7e4f6414
https://doi.org/10.1055/s-0042-120133
https://doi.org/10.1055/s-0042-120133
Publikováno v:
Thrombosis and Haemostasis. 115:222-224
Mini-gene assays confirm the splicing effect of deep intronic variants in the factor VIII gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::165c7a8ce307e543201467132e2b24c0
https://doi.org/10.1160/th15-05-0399
https://doi.org/10.1160/th15-05-0399
Autor:
Janbernd Kirschner, Rudolf Korinthenberg, David Schorling, Carsten G. Bönnemann, M. Beytia, Simone Rost, C. R. Müller, M. Krüger
Publikováno v:
Neuropediatrics. 47
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77b817d0ee6e3835cd75ad65c1ef29ae
https://doi.org/10.1055/s-0036-1583602
https://doi.org/10.1055/s-0036-1583602
Publikováno v:
Aktuelle Neurologie. 36:247-251
This review provides an overview of the genes involved in inheritable myopathies and the contribution of molecular genetics to finding the diagnosis. The emphasis is on disorders with a clinically relevant prevalence in central Europe. A list of diso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66b142eab4258bca360c2c02536bf0b4
https://doi.org/10.1055/s-0028-1090261
https://doi.org/10.1055/s-0028-1090261
Publikováno v:
IEEE Transactions on Electron Devices. 56:306-311
The field-effect transistor operation of monolithic three-terminal junctions (TTJs) is demonstrated at room temperature. The TTJs are based on a modulation-doped GaAs/AlGaAs heterostructure with a 2-D electron gas situated 33 nm below the surface. By
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::109f578b65177b9c204b5ef5897875f3
https://doi.org/10.1109/ted.2009.2010571
https://doi.org/10.1109/ted.2009.2010571
Publikováno v:
IEEE Electron Device Letters. 27:955-958
The drain-current through GaAs/AlGaAs quantum-wire transistors (QWTs) with InGaAs quantum dots (QDs) exploited as floating gates is studied for temperatures up to 150 K. It is found that the threshold hysteresis between the up sweep and the down swee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::876d3117f23fdf849a2146704db1810c
https://doi.org/10.1109/led.2006.886325
https://doi.org/10.1109/led.2006.886325
Publikováno v:
physica status solidi c. 3:3794-3797
Current-voltage characteristics of in-plane gated quantum-wire transistors with embedded InGaAs quantum dots are studied at low temperatures. Due to the floating gate function of the quantum dots, for small bias voltages a threshold hysteresis of up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ef651b26d21bab4155449693af82004
https://doi.org/10.1002/pssc.200671608
https://doi.org/10.1002/pssc.200671608