Zobrazeno 1 - 10
of 113
pro vyhledávání: '"C M, Hurd"'
Publikováno v:
Vox Sanguinis. 83:1-12
Accurate typing of patients for platelet-specific (human platelet) antigens (HPA) is required in several different clinical situations, and blood services need to maintain panels of HPA-typed apheresis platelet donors and whole-blood donors to suppor
Autor:
W. R. McKinnon, C. M. Hurd
Publikováno v:
Journal of Applied Physics. 82:722-728
A double peak is sometimes seen on a picosecond time scale in the decay of the transient photoconduction of GaAs metal–semiconductor–metal structures. This is known from experiments on micron-scale structures of both conventional and backgated de
Autor:
C. M. Hurd, W. R. McKinnon
Publikováno v:
Journal of Applied Physics. 80:5449-5453
We use a two-dimensional, drift-diffusion calculation to illustrate the physics behind the recently described GaAs metal–semiconductor–metal photodetector with an ohmic backgate provided by a p-doped layer. We calculate the transient response of
Autor:
C. M. Hurd, W. R. McKinnon
Publikováno v:
Journal of Applied Physics. 79:1578-1582
A semiconductor with a high resistivity due to a deep trap is called a semi-insulator. A semi-insulator does not always behave like a normal insulator because of so-called bias voltage propagation, which arises from space charge in the deep trap. Thi
Autor:
W. R. McKinnon, C. M. Hurd
Publikováno v:
Journal of Applied Physics. 78:5756-5764
A calculation is described of the transient pulse response of a planar metal-semiconductor-metal photodetector consisting of Schottky contacts made to an active layer of semi-insulating InGaAs:Fe that is supported on an InP:Fe substrate. The simulati
Autor:
C. M. Hurd, W. R. McKinnon
Publikováno v:
Journal of Applied Physics. 75:596-603
The transient response of photogenerated carriers in semi‐insulating (SI) GaAs is expected to be influenced by the inevitable deep traps in the material. To investigate this effect, and its dependence on the trap‐compensation scheme, we have simu
Autor:
J. Walton, E. Ranasinghe, Graham Smith, L. Saul, Willem H. Ouwehand, Kate Campbell, C. M. Hurd
Publikováno v:
British Journal of Haematology. 113:40-42
Severe fetomaternal alloimmune thrombocytopenia requires urgent treatment with compatible platelet concentrates. As prompt treatment is sometimes delayed owing to the unavailability of compatible platelets, we established an accredited platelet donor
Publikováno v:
IEEE Transactions on Electron Devices. 39:297-304
Photoconductive GaAs devices made from a low-doped epitaxial layer on a semi-insulating substrate show transients in their dark-current DC characteristics that persist for up to approximately 2000 s. The authors studied these transients for a range o
Publikováno v:
IEEE Electron Device Letters. 11:342-345
It is shown that the familiar threshold behavior of the backgate current of GaAs MESFETs has hysteresis. This is associated with an S-type negative differential conductivity (S-NDC) of the semi-insulating substrate. It is difficult to account for thi
Publikováno v:
Journal of Applied Physics. 67:7368-7372
The behavior of the leakage current in the semi‐insulating substrate of a GaAs device is more complicated than previously recognized. The voltage dependence of this current seen in a conventional voltage‐controlled experiment has hysteresis, whic