Zobrazeno 1 - 10
of 25
pro vyhledávání: '"C J PATEL"'
Publikováno v:
The Indian Journal of Agricultural Sciences, Vol 90, Iss 5 (2020)
The breeding efforts were made at Sardarkrushinagar (Gujarat) during 2006-07 to 2015-16 for development of castor (Ricinus communis) hybrid suitable for irrigated and rainfed condition. The castor hybrid GCH 8 (SHB 896) was evaluated in IVHT, AVHT-I
Externí odkaz:
https://doaj.org/article/feb22d106b5b4ea285ed388c47d46ebf
Autor:
C. J. Patel
Publikováno v:
World Journal of Pharmacy and Pharmaceutical Sciences. :1618-1632
Autor:
C. J. Patel
Publikováno v:
World Journal of Pharmacy and Pharmaceutical Sciences. :1434-1448
Publikováno v:
ADVANCE RESEARCH JOURNAL OF CROP IMPROVEMENT. 5:172-175
Fenpyroximate 5 EC at two different doses viz., 25 and 37.5 g a.i. /ha along with imidacloprid 17.8 SL (20 g a.i. / ha) and dicofol 18.5 EC (500 g a.i. /ha) as standard checks for leaf hoppers and spider mites, respectively, were evaluated for bio-ef
Publikováno v:
Cytopathology. 20:380-387
Introduction: Conventional Pap smears (CPS) have little impact on the detection of endometrial carcinoma. Although liquid-based cytology (LBC) is replacing CPS in the UK, experience with identification of endometrial cancers with this technique is li
Publikováno v:
International Journal of Applied Pharmaceutics. 9:1
Objective: This study aims to develop and validate a stability indicating HPLC method for simultaneous estimation of sacubitril and valsartan in pharmaceutical dosage form. Methods: Sacubitril and valsartan separation were achieved by LC-20 AT C 18 (
Autor:
Y. Campidelli, C. Hernandez, Magnus Willander, O. Nur, C J Patel, Magnus Karlsteen, R N Kyutt, Ulf Södervall, D. Bensahel
Publikováno v:
Semiconductor Science and Technology. 15:L25-L30
Double-crystal x-ray diffraction rocking curves and two-dimensional reciprocal space mapping (2D-RSM) are utilized to characterize the degree of strain relaxation, lattice parameters and assessment of defect propagation in two growth approaches to yi
Autor:
O. Nur, Q.X. Zhao, Ulf Södervall, Per-Olof Holtz, W.B. de Boer, Magnus Willander, C. J. Patel
Publikováno v:
Journal of Crystal Growth. 193:328-334
Single and double Si1−xGex/Si quantum well (QW) structures, which were grown by atmospheric pressure chemical vapor deposition (APCVD), are characterized by photoluminescence and secondary-ion mass spectrometry. Systematic post-growth annealing tre
Publikováno v:
Semiconductor Science and Technology. 13:999-1005
An analytical model for a double QW-PMOS is developed for the determination of the threshold voltages and an estimate of the hole densities in each conducting QW-channel including the silicon surface channel. Detailed analysis of the uncoupled retrog
Publikováno v:
Journal of Applied Physics. 83:3565-3573
(100) Silicon wafers were implanted with 120 keV germanium ions at substrate temperatures up to 600 °C. The germanium profile was monitored together with the crystalline fraction of the implanted silicon by Rutherford backscattering spectroscopy cha