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pro vyhledávání: '"C J, Szwejkowski"'
Autor:
S, Alaie, M G, Baboly, Y-B, Jiang, S, Rempe, D H, Anjum, S, Chaieb, B F, Donovan, A, Giri, C J, Szwejkowski, J T, Gaskins, M M M, Elahi, D F, Goettler, J, Braun, P E, Hopkins, Z C, Leseman
Publikováno v:
ACS applied materialsinterfaces. 10(43)
Focused ion beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however, are not well und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::eb6a71894aa0996525f9eb524f99c56b
https://pubmed.ncbi.nlm.nih.gov/30280889
https://pubmed.ncbi.nlm.nih.gov/30280889
