Výsledky vyhledávání - "C J, Humphreys"

Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene

Autor: Y. W. Sun, D. Holec, D. Gehringer, L. Li, O. Fenwick, D. J. Dunstan, C. J. Humphreys

Publikováno v: Physical Review B. 105

Density functional theory has been employed to study graphene on the (111), (100) and (110) surfaces of silicon (Si) substrates. There are several interesting findings. First, carbon atoms in graphene form covalent bonds with Si atoms, when placed cl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4cc95507f01b99f19ab2c224db1e3b3
https://doi.org/10.1103/physrevb.105.165416

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Akademický článek

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Autor: J. T. Griffiths, T. Zhu, F. Oehler, R. M. Emery, W. Y. Fu, B. P. L. Reid, R. A. Taylor, M. J. Kappers, C. J. Humphreys, R. A. Oliver

Publikováno v: APL Materials, Vol 2, Iss 12, Pp 126101-126101-5 (2014)

Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped st

Externí odkaz: https://doaj.org/article/36f8b25e2cc5498790b171d574ea0cf9

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