Zobrazeno 1 - 10
of 40
pro vyhledávání: '"C Eggs"'
Publikováno v:
Journal of Luminescence. 97:40-50
UV absorption, UV light induced emission (photoluminescence, PL) and PL-excitation spectra of H8(SiO1.5)8 and alkyl-substituted R8(SiO1.5)8 in solution, powder, and “gel” have been studied systematically. All investigated molecules show similar s
Publikováno v:
Journal of Physics D: Applied Physics. 34:2160-2173
A model describing the chemical clustering kinetics in a low-pressure acetylene RF discharge has been developed. The model contains neutral chain and cyclic hydrocarbons, positive and negative ions, and electrons. The gas-phase chemistry includes neu
Publikováno v:
Thin Solid Films. 332:277-281
Tin doped indium oxide (ITO) films of different tin concentrations were deposited by e-beam evaporation onto glass substrates. These ITO films were investigated using grazing incidence X-ray diffractometry (GIXRD). The application of the Rietveld ref
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:2938-2944
Thin TiNx films were deposited using a hollow cathode arc evaporation device (HCAED) for studying the influence of low energy ion bombardment on film growth and film properties. Films were deposited at various nitrogen gas flows and negative substrat
Publikováno v:
Thin Solid Films. 305:164-171
The application of X-ray photoelectron spectroscopy (XPS) for the characterization of deposited thin indium tin oxide (ITO) layers by reactive direct-current magnetron sputtering in Ar:O 2 gas mixtures is performed. The influence of the gas mixture a
Publikováno v:
Thin Solid Films, 290-291, 381-385. Elsevier
Copyright (c) 1996 Elsevier Science B.V. All rights reserved. The present work discusses the relation between plasma parameters and the film microstructure. Both, plasma diagnostic and film characterization were carried out. The plasma in front of th
Publikováno v:
Thin Solid Films, 283(1-2), 158-164. Elsevier
Aluminum plates contaminated with hydrocarbon containing compounds (lubricants) were treated in an argon, oxygen and hydrogen plasma generated by a capacitively coupled 13.56 MHz rf discharge. Power and gas pressure have been varied. During the proce
Publikováno v:
Thin Solid Films, 290-291, 386-389. Elsevier
Thin Ti films were grown on silicon (100) wafers by means of a hollow cathode arc evaporation device. The layer growth was monitored in situ by monochromatic ellipsometry. Spectroscopic ellipsometry was used to characterize the as-deposited layers. T
Publikováno v:
Physica Status Solidi (a). 152:443-450
Reactive ion etching characteristics of epitaxial Si1−xGex layers in SiCl4/Cl2/N2 plasma are investigated by different diagnostic techniques, such as Auger electron spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. Surfac
Publikováno v:
Thin Solid Films. 261:25-30
When titanium is deposited on silicon 〈100〉 at different discharge powers in a hollow cathode arc evaporator device the chemical, physical and structural properties of the thin films depend strongly on the discharge power. α-Ti with small gradie