Zobrazeno 1 - 10
of 90
pro vyhledávání: '"C Dubon-Chevallier"'
Publikováno v:
Journal de Physique III. 7:2153-2157
A Passivated HBT structure which includes a thin GaInP layer between the GaAlAS emitter and the GaAs base layer has been proposed in order to reduce surface and space charge recombination current, while keeping a low p-type ohmic contact resistivity.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6db8531c2eb73cd1fd0b946cd1a25d6a
https://doi.org/10.1051/jp3:1997247
https://doi.org/10.1051/jp3:1997247
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 44:332-335
Using a thin film technology, we have designed and fabricated a new passive device for noise parameter measurement test instrumentation verification. The main feature specifying this device is the same order of magnitude for input-output reflection c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cff2dbce86ad411d4a47b54a39fd6035
https://doi.org/10.1109/19.377845
https://doi.org/10.1109/19.377845
Publikováno v:
Microelectronic Engineering. 25:293-298
It has been demonstrated that sulfur treatment using (NH4)2Sx solution provides an effective passivation of the GaAs surface. The effectiveness of the treatment is dependant on polysulfides Sn2- concentrations. These treatments being unfortunately no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c242124b9c8e19036016d7076d326b4c
https://doi.org/10.1016/0167-9317(94)90028-0
https://doi.org/10.1016/0167-9317(94)90028-0
Publikováno v:
IEEE Transactions on Electron Devices. 41:2000-2005
Noise measurements both on transmission line model (TLM) test structures and on associated HBT's are presented. Contact noise is proved to be negligible in the TLM's related to the base structure of transistors. A Hooge parameter for p/sup ++/ doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52c5865ea5ce92bc7c189eca25d77946
https://doi.org/10.1109/16.333817
https://doi.org/10.1109/16.333817
Publikováno v:
Journal of Physics D: Applied Physics. 26:2055-2060
Refractory ohmic contacts to n-type GaAs have been developed for heterojunction bipolar transistors (HBTS) processed with self-aligned technology and including high-temperature anneals. We report the results on W and MoGe deposition, annealing and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f94941a302b60e183416f050a71188ec
https://doi.org/10.1088/0022-3727/26/11/033
https://doi.org/10.1088/0022-3727/26/11/033
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:2536-2542
A characterization of monocrystalline GaAs surfaces after reactive ion etching of a GeMoW contact in SF6–O2 is presented. Scanning electron microscopy (SEM), monochromatized x‐ray photoelectron spectroscopy (XPS), and Auger spectroscopy are used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9541883e06af5637306bbde956ca34fc
https://doi.org/10.1116/1.578604
https://doi.org/10.1116/1.578604
Autor:
N. Jourdan, Bernard Sermage, R. Mellet, A.M. Pougnet, C. Dubon-Chevallier, J.L. Benchimol, F. Alexandre, F. Héliot
Publikováno v:
Journal of Crystal Growth. 127:690-694
This paper presents a comparative study of GaAs carbon doping by molecular beam epitaxy (MBE) and chemical beam epitaxy (CBE), using a heated graphite filament and trimethylgallium (TMG), respectively, as sources of carbon. With a growth rate twice h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0892e0e5fce99f5439e6da7d11dfbbae
https://doi.org/10.1016/0022-0248(93)90712-6
https://doi.org/10.1016/0022-0248(93)90712-6
Publikováno v:
Journal of Applied Physics. 71:5694-5698
The interactions, in GaAlAs/GaAs heterojunction bipolar transistor structures, between implanted Mg atoms and different p‐type base dopants (Be in layers grown by molecular beam epitaxy, Zn or C in layers grown by organometallic chemical vapor depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b6d5fb1ca3bf7d672db39975bd92f97
https://doi.org/10.1063/1.351355
https://doi.org/10.1063/1.351355
Publikováno v:
IEEE Transactions on Electron Devices. 39:767-770
In this study, the increase of V/III flux ratio combined with a low growth temperature has been found to lead to a drastic improvement of the HBT current gain, and also to avoid the base dopant (Be) diffusion during high post-growth process annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::750012c0ec89db25f971902598aa2a0d
https://doi.org/10.1109/16.127463
https://doi.org/10.1109/16.127463
Publikováno v:
Applied Surface Science. 50:462-465
The annealing process of Mg-implanted GaAs/GaAlAs HBT's has been optimized using different analysis techniques. The Mg activation was deduced from a comparison between the atomic profile determined by SIMS and the electrical profile determined by ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9df3c4e31576d5faae8fd4609212ca97
https://doi.org/10.1016/0169-4332(91)90218-9
https://doi.org/10.1016/0169-4332(91)90218-9