Zobrazeno 1 - 10
of 63
pro vyhledávání: '"C Dachs"'
Autor:
C. Dachs
Publikováno v:
e & i Elektrotechnik und Informationstechnik. 122:466-471
Near Field Communication (NFC) is opening-up completely new perspectives for the mobile communication industry. It enables contactless peer-to-peer communication, reading/writing of contactless cards and, when combined with a smart card IC, emulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0fa4c8204fe6f87efd93b9a5e163fd7
https://doi.org/10.1007/bf03054380
https://doi.org/10.1007/bf03054380
Autor:
J. Garnier, J.-M. Palau, C. Sudre, C. Detcheverry, J. Gasiot, Eric Lorfevre, Robert Ecoffet, C. Dachs, M.-C. Calvet
Publikováno v:
IEEE Transactions on Nuclear Science. 45:1624-1627
Heavy ion induced burnout is reported, for the first time, in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b64a1bae36c2efba2669ca6cc3e871c
https://doi.org/10.1109/23.685250
https://doi.org/10.1109/23.685250
Autor:
Eric Lorfevre, C. Dachs, Robert Ecoffet, C. Detcheverry, M.-C. Calvet, J.-M. Palau, J. Gasiot, F. Roubaud
Publikováno v:
IEEE Transactions on Nuclear Science. 44:2353-2357
Heavy ion induced destructive failures are reported in N-channel power IGBTs. For the first time, an experimental and 2D simulation investigation shows that latchup is involved in the triggering of the device.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5032cfcecb7d6532e6095757ebec398c
https://doi.org/10.1109/23.659061
https://doi.org/10.1109/23.659061
Autor:
C. Detcheverry, C. Dachs, J.-M. Palau, C. Sudre, Robert Ecoffet, Eric Lorfevre, G. Bruguier, J. Gasiot
Publikováno v:
IEEE Transactions on Nuclear Science. 44:2266-2273
This work presents SEU phenomena in advanced SRAM memory cells. Using mixed-mode simulation, the effects of scaling on the notions of sensitive area and critical charge is shown. Specifically, we quantify the influence of parasitic bipolar action in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::495df029460ae84cf44bf1c25043494a
https://doi.org/10.1109/23.659045
https://doi.org/10.1109/23.659045
A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs
Autor:
C. Dachs, Kenneth F. Galloway, Jeffrey L. Titus, C.F. Wheatley, M. Allenspach, G.H. Johnson, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 43:2932-2937
The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03e135a3cc2cb5a550aa179ebdccfb31
https://doi.org/10.1109/23.556888
https://doi.org/10.1109/23.556888
Publikováno v:
IEEE Transactions on Nuclear Science. 43:546-560
Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOSFETs are catast
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::535cb8a3ae10bf2b91fe225a16ca584b
https://doi.org/10.1109/23.490900
https://doi.org/10.1109/23.490900
Publikováno v:
Radiation Effects and Defects in Solids. 139:229-239
This work concerns a parasitic N+PNN+ transistor appearing in a power MOSFET. 2D Medici simulations point out a close correlation between the static characteristic and the transient values of both the current and the reverse bias of the transistor ir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c010fa05076226267a41ee8a1aa395e7
https://doi.org/10.1080/10420159608212928
https://doi.org/10.1080/10420159608212928
Autor:
F. Roubaud, J.-M. Palau, J. Gasiot, P. Tastet, P. Calvel, C. Dachs, G. Bruguier, M.-C. Calvett
Publikováno v:
IEEE Transactions on Nuclear Science. 42:1935-1939
2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEE). SEE parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p/sup +/ plug modific
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efb474d23d7673e7bc6e301c64c98d82
https://doi.org/10.1109/23.489237
https://doi.org/10.1109/23.489237
Publikováno v:
IEEE Transactions on Nuclear Science. 41:2167-2171
Triggering of Single Event Burnout (SEB) in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is studied by means of experiments and simulations based on real structures. Conditions for destructive and nondestructive events are investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9816485219933dce3527858cda1f9afa
https://doi.org/10.1109/23.340558
https://doi.org/10.1109/23.340558
Autor:
R. Difrenza, P. Stolk, M. Bidaud, Pierre Morin, M. Woo, B. Tavel, R. Wacquant, M. Denais, Franck Arnaud, R. Boeuf, F. Payet, D. Reber, N. Cagnat, K. Rochereau, M. Marin, M.T. Basso, B. Duriez, C. Ortolland, Damien Lenoble, Y. Laplanche, C. Dachs, H. Brut, David Roy, R. Palla, D. Barge
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
This paper demonstrates a full gate stack optimization by using post gate anneal (PGA) solution coupled with both germanium and fluorine gate predoping. We obtained a large carrier mobility enhancement for both NMOS (+50%) and PMOS (+20%) thanks to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd2c977b7d9f1b89f67ddec77baf9fe2
https://doi.org/10.1109/iedm.2004.1419311
https://doi.org/10.1109/iedm.2004.1419311