Zobrazeno 1 - 10
of 29
pro vyhledávání: '"C Breitlow"'
Publikováno v:
Semiconductor Science and Technology. 11:1015-1021
We investigate the coupling between edge and bulk states in GaAs/GaAlAs quantum Hall conductors with different lateral geometry by analysing the non-ohmic magnetoresistance in quantizing magnetic fields. By tilting the 2DES of the sample in situ with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aca19a411c7f7ae0e3351c96a8853fa0
https://doi.org/10.1088/0268-1242/11/7/007
https://doi.org/10.1088/0268-1242/11/7/007
Autor:
C. Breitlow, G. Nachtwei, L. Bliek, H. Nickel, W Schlapp, L. Bartholomäus, M. Blöcker, A. Linke, R Losch, P. Svoboda, M. Cukr, Thomas Weimann, F. J. Ahlers
Publikováno v:
Semiconductor Science and Technology. 11:89-95
We investigated the local potential distribution over gated double-bridge structures patterned on GaAs/GaAlAs heterostructures. The current and potential distribution over the gated double-bridge devices was measured for several sets of filling facto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e31d6286a50c190e4668b36c800642c8
https://doi.org/10.1088/0268-1242/11/1/020
https://doi.org/10.1088/0268-1242/11/1/020
Autor:
Thomas Weimann, F. J. Ahlers, R Losch, C. Breitlow, G. Nachtwei, L. Bliek, H. Nickel, W Schlapp
Publikováno v:
Semiconductor Science and Technology. 10:529-535
We investigated the local potential distribution on multibridge structures in high magnetic fields made on the basis of GaAs/GaAlAs heterostructures. The samples provide six bridges with different widths ranging from 2 to 100 mu m connected in parall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ac8dd1217ce49033c8534f04a8c2459
https://doi.org/10.1088/0268-1242/10/4/025
https://doi.org/10.1088/0268-1242/10/4/025
Autor:
C. Breitlow, M. Cukr, G. Nachtwei, P. Svoboda, J.H. Seyfarth, F. J. Ahlers, L. Bliek, S. Heide
Publikováno v:
Semiconductor Science and Technology. 9:10-18
We measured the current-dependent asymmetry of spin-split Shubnikov-de Haas (SdH) peaks at a variety of GaAs/GaAlAs heterojunctions with various sample geometries. The different current dependence of the spin-split SdH peaks is due to a spin-dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3b9e8d302b1c869a0f4c8e92d7fba4f
https://doi.org/10.1088/0268-1242/9/1/003
https://doi.org/10.1088/0268-1242/9/1/003
Autor:
G. Nachtwei, P Streda, A Jaeger, M. Cukr, C. Breitlow, P. Svoboda, H Schlegel, L. Bliek, F. J. Ahlers
Publikováno v:
Semiconductor Science and Technology. 8:25-30
Reports on the temperature-dependent scaling behaviour of rho xx and rho xy between different quantum Hall plateaux on GaAs-GaAlAs heterojunctions. A characteristic dependence was found of the scaling behaviour on the spin quantum number indicating a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75614742584f88fbcf87338944802868
https://doi.org/10.1088/0268-1242/8/1/004
https://doi.org/10.1088/0268-1242/8/1/004
Publikováno v:
Journal of Physics: Condensed Matter. 4:4003-4015
The filling-factor dependence of the critical current of the quantum Hall effect (QHE) us measured using several current and voltage contact configurations on Si metal-oxide-semiconductor and Si metal-nitride-oxide-semiconductor Hall bars and Corbino
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff58bd44071c697014944addefdd0e76
https://doi.org/10.1088/0953-8984/4/15/014
https://doi.org/10.1088/0953-8984/4/15/014
Autor:
J.H. Seyfarth, L. Bliek, C. Breitlow, G. Nachtwei, P. Svoboda, F.-J. Ahlers, J. Breitlow-Hertzfeldt
Publikováno v:
Superlattices and Microstructures. 12:195-201
We measured the critical current of the quantum Hall effect of Si-MISFET-structures and its dependence on the gate voltage and on GaAsGaAlAs-heterostructures and its dependence on the magnetic field. Calculations based upon a Zener tunneling model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c191a87e82756d83f0ba834b390d88e2
https://doi.org/10.1016/0749-6036(92)90336-4
https://doi.org/10.1016/0749-6036(92)90336-4
Publikováno v:
Surface Science. 250:243-250
The measurement of activation energies for various positions of the Fermi level between two Landau levels provides an opportunity to evaluate the density of states (DOS) in the quantum Hall regime. We present results of measurements of the temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4774e1763d778a71088aa5f6accafc87
https://doi.org/10.1016/0039-6028(91)90727-a
https://doi.org/10.1016/0039-6028(91)90727-a
Publikováno v:
Semiconductor Science and Technology. 5:1088-1092
Transverse currents up to amounts comparable with the source-drain current were applied to the Hall probes of Si-MOS Hall devices in the quantum Hall regime. The currents were generated by resistive loading of the Hall probes and overcompensation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aaa035a8a528d4ce98e41e27f162ecd
https://doi.org/10.1088/0268-1242/5/11/003
https://doi.org/10.1088/0268-1242/5/11/003
The temperature dependence of both components of the resistivity tensor $\varrho_{xx}(T)$ and $\varrho_{xy}(T)$ has been studied at T $\geq$ 4.2 K within IQHE plateaux around filling factors \nu=2 and \nu=4 of medium- -mobility GaAs/AlGaAs heterostru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::150eacdca80ba0a33279411833a1a8ce
