Zobrazeno 1 - 10
of 28
pro vyhledávání: '"C A, Standley"'
Publikováno v:
Data in brief. 20
The dataset for this article contains Urinary and Intestinal Schistosomiasis from Lango region, northern Uganda which is the only known co-endemic region for
Publikováno v:
Science (New York, N.Y.). 348(6236)
Autor:
J. R. Stothard, C. J. Standley
Publikováno v:
Journal of Parasitology. 98:1049-1051
While Schistosoma rodhaini is typically considered a parasite of small mammals and is very scantly distributed in the Lake Victoria basin, it is known to hybridize with the more widespread Schistosoma mansoni, the causative agent of intestinal schist
Publikováno v:
The journal of maternal-fetalneonatal medicine : the official journal of the European Association of Perinatal Medicine, the Federation of Asia and Oceania Perinatal Societies, the International Society of Perinatal Obstetricians. 11(4)
To determine the effects of magnesium sulfate therapy on maternal and fetal osmolality in pre-eclampsia.A total of 34 pre-eclamptic women and 22 normal pregnant women participated in the study. Venous blood was drawn upon admission to the labor and d
Publikováno v:
The Journal of maternal-fetal medicine. 5(3)
The objective of this study is to determine the possibility that pre-eclampsia, a disease characterized by altered vascular tone, may result in altered levels of fetal BNP and cGMP, and to determine whether pre-eclampsia alters the maternal-fetal rel
Autor:
A. Kessler, C. C. Standley
Publikováno v:
Proceedings of the Royal Society of London. Series B. Biological Sciences. 195:129-136
The World Health Organization Expanded Programme of Research, Development and Research Training in Human Reproduction was established in 1972 to improve existing methods of fertility regulation, develop new methods and assist national authorities in
Publikováno v:
Journal of Applied Physics. 38:4656-4662
Re‐emission coefficients for SiO2 films and for Si films deposited through rf sputtering have been measured as a function of pressure and input power. Values for SiO2 were 0.86−0.30 and for Si 0.45−0.07. High re‐emission coefficients correlat
Autor:
L. I. Maissel, C. L. Standley
Publikováno v:
Journal of Applied Physics. 35:1530-1534
The electrical properties of several tantalum oxide diodes with various metal counterelectrodes have been studied. The devices were prepared on sputtered tantalum by anodizing to the desired oxide thickness (100–200 A) and evaporating the second me
Publikováno v:
IBM Journal of Research and Development. 14:176-181
An improved technique for measuring re-emission coefficients is described and data on the effect of temperature are presented. These are discussed in the light of a physical model of film growth during sputtering where in constant re-emission of mate
Publikováno v:
IBM Journal of Research and Development. 16:67-70