Zobrazeno 1 - 3
of 3
pro vyhledávání: '"César Lockhart De la Rosa"'
Autor:
Luca Panarella, Ben Kaczer, Quentin Smets, Stanislav Tyaginov, Pablo Saraza Canflanca, Andrea Vici, Devin Verreck, Tom Schram, Dennis Lin, Theresia Knobloch, Tibor Grasser, César Lockhart de la Rosa, Gouri S. Kar, Valeri Afanas’ev
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)
Abstract Evidence of microscopic inhomogeneities of the side source/drain contacts in 300 mm wafer integrated MoS2 field-effect transistors is presented. In particular, the presence of a limited number of low Schottky barrier spots through which chan
Externí odkaz:
https://doaj.org/article/4dc4c462dd604865a0278a59c121b370
Autor:
Steven Brems, Souvik Ghosh, Quentin Smets, Marie-Emmanuelle Boulon, Andries Boelen, Koen Kennes, Hung-Chieh Tsai, Francois Chancerel, Clement Merckling, Pieter-Jan Wyndaele, Jean-Francois De Marneffe, Tom Schram, Pawan Kumar, Stefanie Sergeant, Thomas Nuytten, Stefan De Gendt, Henry Medina Silva, Benjamin Groven, Pierre Morin, Gouri Sankar Kar, César Lockhart De la Rosa, Didit Yudistira, Joris Van Campenhout, Inge Asselberghs, Alain Phommahaxay
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bbbbfb500f3632e1fef09b85aeb6972
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381
Autor:
Pieter-Jan Wyndaele, Jean-Francois de Marneffe, Stefanie Sergeant, César Lockhart de la Rosa, Steven Brems, Arantxa Caro, Stefan De Gendt
Two-dimensional transition metal dichalcogenides (2D TMDC’s) hold a wide variety of applications, among which microelectronic devices. However, various challenges hinder their integration e.g., good dielectric deposition on the 2D TMDC surface. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4afc7b5bcda381a93d16ad107fdcf040
https://doi.org/10.21203/rs.3.rs-2550514/v1
https://doi.org/10.21203/rs.3.rs-2550514/v1
