Zobrazeno 1 - 10
of 16
pro vyhledávání: '"César J. Lockhart de la Rosa"'
Autor:
César J. Lockhart de la Rosa, Goutham Arutchelvan, Alessandra Leonhardt, Cedric Huyghebaert, Iuliana Radu, Marc Heyns, Stefan De Gendt
Publikováno v:
APL Materials, Vol 6, Iss 5, Pp 058301-058301-6 (2018)
Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thic
Externí odkaz:
https://doaj.org/article/af28f4d9502c4e30aac03a8193ef5a04
Autor:
César J. Lockhart de la Rosa, Joan Teyssandier, Anton Brown, Steven De Feyter, Annelies Delabie, Haodong Zhang, Ken Verguts, Stefan De Gendt, John Greenwood, Matty Caymax, Miriam C. Rodríguez González, Brandon E. Hirsch, Steven Brems
Publikováno v:
Nanoscale. 13(28)
The integration of graphene, and more broadly two-dimensional materials, into devices and hybrid materials often requires the deposition of thin films on their usually inert surface. As a result, strategies for the introduction of surface reactive si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15fc989baf6dce8e0f7263082b0848f3
https://pubmed.ncbi.nlm.nih.gov/34254598
https://pubmed.ncbi.nlm.nih.gov/34254598
Autor:
Yasuhiko Fujita, Johan Hofkens, Stefan De Gendt, Jia Su, Wei Yi Chiang, Hiroshi Uji-i, Shuichi Toyouchi, Kangwei Xia, Hiroshi Masuhara, Haifeng Yuan, César J. Lockhart de la Rosa, Steven De Feyter
Publikováno v:
Nanoscale. 12(20)
Graphene, a single atomic layer of sp2 hybridized carbon, is a promising material for future devices due to its excellent optical and electrical properties. Nevertheless, for practical applications, it is essential to deposit patterned metals on grap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64ea2779d3cc4460c1d871f5b9f84def
https://pubmed.ncbi.nlm.nih.gov/32400800
https://pubmed.ncbi.nlm.nih.gov/32400800
Autor:
Alessandra Leonhardt, Daniele Chiappe, César J. Lockhart de la Rosa, Anda Mocuta, Philippe Matagne, Stefan De Gendt, Anh Khoa Augustin Lu, Marc Heyns, Devin Verreck, Goutham Arutchelvan, Geoffrey Pourtois, Iuliana Radu
Publikováno v:
IEEE Transactions on Electron Devices. 65:4635-4640
2-D material FETs hold the promise of excellent gate control, but the impact of nonidealities on their performance remains poorly understood. This is because of the need, so far, to use computationally intensive nonequilibrium Green’s function (NEG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::120156cccc6db1aaf04cd07961293607
https://doi.org/10.1109/ted.2018.2863750
https://doi.org/10.1109/ted.2018.2863750
Autor:
Yashwanth Balaji, Guido Groeseneken, Cedric Huyghebaert, Dan Mocuta, Daniele Chiappe, César J. Lockhart de la Rosa, Quentin Smets, Iuliana Radu, Tarun Agarwal, Anh Khoa Augustin Lu, Dennis Lin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1048-1055 (2018)
ESSDERC
ESSDERC
2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control. TMDs are especially well suited for tunneling field-effect transistors (TFETs) due to their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b48613df422d1ef876b0f864fc3dfd82
https://doi.org/10.1109/jeds.2018.2815781
https://doi.org/10.1109/jeds.2018.2815781
Autor:
Marc Heyns, Philippe Matagne, Stefan De Gendt, Iuliana Radu, César J. Lockhart de la Rosa, Surajit Sutar, Goutham Arutchelvan, Cedric Huyghebaert
Publikováno v:
Nanoscale. 9:10869-10879
Despite the fact that two-dimensional MoS2 films continue to be of interest for novel device concepts and beyond silicon technologies, there is still a lack of understanding on the carrier injection at metal/MoS2 interface and effective mitigation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1a455784bfa7e0b067fefd928d49521
https://doi.org/10.1039/c7nr02487h
https://doi.org/10.1039/c7nr02487h
Autor:
Markus Heyne, Amirhasan Nourbakhsh, Inge Asselberghs, Marc Heyns, Cedric Huyghebaert, César J. Lockhart de la Rosa, Iuliana Radu, Stefan De Gendt
Publikováno v:
Nanoscale. 9:258-265
Despite rapid progress in 2D molybdenum disulfide (MoS2) research in recent years, MoS2 field-effect transistors (FETs) still suffer from a high metal-to-MoS2 contact resistance and low intrinsic mobility, which are major hindrances to their future a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45c8ddd6e990e06bfddd9aae840c114f
https://doi.org/10.1039/c6nr06980k
https://doi.org/10.1039/c6nr06980k
Autor:
César J. Lockhart de la Rosa, Iuliana Radu, Marc Heyns, Dennis Lin, Stefan De Gendt, Cedric Huyghebaert, Goutham Arutchelvan
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:Q3072-Q3081
© The Author(s) 2016. Published by ECS All rights reserved. MoS2 based transistors are being explored as a promising candidate for different applications. The techniques employed to characterize these devices have been directly adapted from 3D semic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3320a5c23d3293217a7c65106cd31ac2
https://doi.org/10.1149/2.0131611jss
https://doi.org/10.1149/2.0131611jss
Autor:
Luca Banszerus, Stefan De Gendt, Cedric Huyghebaert, Alessandra Leonhardt, Takashi Taniguchi, Christoph Stampfer, Vivek Mootheri, Thomas Nuytten, Kenji Watanabe, César J. Lockhart de la Rosa, Stefanie Sergeant
Publikováno v:
Advanced Materials Interfaces. 7:2000413
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b095b740f14122ac5b40ea689c2ab191
https://doi.org/10.1002/admi.202000413
https://doi.org/10.1002/admi.202000413
Autor:
Stefan De Gendt, Vivek Mootheri, D. Lin, César J. Lockhart de la Rosa, Marco Mascaro, Thomas Nuytten, Alessandra Leonhardt, Christoph Stampfer, Stefanie Sergeant, Cedric Huyghebaert, Luca Banszerus
Publikováno v:
ECS Meeting Abstracts. :845-845
2D TMDCs show promise to multiple applications, from distributed systems, to optical devices, and high-performance electronics. Nonetheless, how these ultra-thin semiconductors are impacted by their encapsulating environment / interfacial interaction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66414a62c1cf09d81676b6cdca8d2fe7
https://doi.org/10.1149/ma2020-0110845mtgabs
https://doi.org/10.1149/ma2020-0110845mtgabs