Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Cédric Masante"'
Publikováno v:
Advanced Electronic Materials
Advanced Electronic Materials, Wiley, 2021, pp.2100542. ⟨10.1002/aelm.202100542⟩
Advanced Electronic Materials, Wiley, 2021, pp.2100542. ⟨10.1002/aelm.202100542⟩
International audience; Ultrawide bandgap semiconductor technologies offer potentially revolutionary advances in the rapidly developing areas of quantum communication, short wavelength optics, smart energy conversion and biomedical interfaces. These
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0d067da5dcb054d86c3c71d0bb675b7
http://arxiv.org/abs/2105.08329
http://arxiv.org/abs/2105.08329
Publikováno v:
Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2020, 111, pp.108185. ⟨10.1016/j.diamond.2020.108185⟩
Diamond and Related Materials, Elsevier, 2020, 111, pp.108185. ⟨10.1016/j.diamond.2020.108185⟩
International audience; We report the 250 • C operation of a diamond-based monolithic bidirectional switch. A normally-ON double gate deep depletion MOSFET was fabricated with a 400 nm p-type channel with a boron doping of [N AN D ]= 2.3×10 17 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7feb50d6d8de296ed5e909e3bed67e99
https://hal.archives-ouvertes.fr/hal-03017013
https://hal.archives-ouvertes.fr/hal-03017013
Publikováno v:
Advanced Electronic Materials. 8:2270004
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d169f1bc8b81e5c5b770073c2e6c171
https://doi.org/10.1002/aelm.202270004
https://doi.org/10.1002/aelm.202270004
Autor:
Rémi Comyn, Yvon Cordier, Cédric Masante, Idriss Abid, Riad Kabouche, Farid Medjdoub, Catherine Bougerol, Julien Pernot
Publikováno v:
Micromachines
Micromachines, 2019, 10 (10), pp.690. ⟨10.3390/mi10100690⟩
Micromachines, Vol 10, Iss 10, p 690 (2019)
Micromachines, MDPI, 2019, 10 (10), pp.690. ⟨10.3390/mi10100690⟩
Volume 10
Issue 10
Micromachines, 2019, 10 (10), pp.690. ⟨10.3390/mi10100690⟩
Micromachines, Vol 10, Iss 10, p 690 (2019)
Micromachines, MDPI, 2019, 10 (10), pp.690. ⟨10.3390/mi10100690⟩
Volume 10
Issue 10
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::353517663827e8faf0afe58dda554508
https://hal.science/hal-02344992/document
https://hal.science/hal-02344992/document
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A diamond MOSFET has been fabricated and characterized up to 250°C. The fabrication process has been improved in order to significantly reduce the specific on resistance, down to $50\ \mathbf{m}\mathbf{\Omega}.\mathbf{cm}^{2}$ , and the gate leakage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1db88ac5ae656a711d0e06f576e6578
https://doi.org/10.1109/ispsd.2019.8757645
https://doi.org/10.1109/ispsd.2019.8757645
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2021, 54 (23), pp.233002. ⟨10.1088/1361-6463/abe8fe⟩
Journal of Physics D: Applied Physics, 2021, 54 (23), pp.233002. ⟨10.1088/1361-6463/abe8fe⟩
Journal of Physics D: Applied Physics, IOP Publishing, 2021, 54 (23), pp.233002. ⟨10.1088/1361-6463/abe8fe⟩
Journal of Physics D: Applied Physics, 2021, 54 (23), pp.233002. ⟨10.1088/1361-6463/abe8fe⟩
Diamond has been explored to develop prototype field-effect transistors (FETs). At present, various architectures that are suited to high temperature and high-radiation environments are still under investigation for power electronics applications. Re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::956461660225a61b591cfceca87b5a08
https://doi.org/10.1088/1361-6463/abe8fe
https://doi.org/10.1088/1361-6463/abe8fe
Autor:
Thanh-Toan Pham, Etienne Gheeraert, Julien Pernot, Daniel Araujo, Marina Gutierrez, David Eon, Cédric Masante, Nicolas Rouger
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2018, 112 (10), pp.102103. ⟨10.1063/1.5018403⟩
Applied Physics Letters, American Institute of Physics, 2018, 112 (10), pp.102103. ⟨10.1063/1.5018403⟩
In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors using 40 nm thick Al2O3 deposited by Atomic Layer Deposition at 380 °C and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02006bf4bde791bc1c7bc4f08ceb1e7c
https://doi.org/10.1063/1.5018403
https://doi.org/10.1063/1.5018403
Autor:
Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub
Publikováno v:
Micromachines, Vol 10, Iss 10, p 690 (2019)
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown volta
Externí odkaz:
https://doaj.org/article/802ee7d0f8cc453e8a1d92b9d0d01a54