Zobrazeno 1 - 10
of 186
pro vyhledávání: '"C, Sone"'
Publikováno v:
Journal of the Korean Physical Society. 55:318-321
We have investigated the In/indium tin oxide (ITO) scheme for obtaining high-quality Ohmic contacts to Ga-face and N-face nGaN for InGaN-based light-emitting diodes (LEDs). The In/ITO contacts to Ga-face n-GaN become Ohmic with specific contact resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f912ac8b456a93c16530055e63e8b14a
https://doi.org/10.3938/jkps.55.318
https://doi.org/10.3938/jkps.55.318
Publikováno v:
Crop Science. 49:1438-1443
Nondestructive estimation of leaf area index (LAI) using two canopy analyzers (LAI-2000 and SunScan) was compared with destructively measured LAI for four upland rice (Oryza spp.) cultivars with various types of canopy development during the period f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::537f9d02758510c2d6ee2ffbd530cabd
https://doi.org/10.2135/cropsci2008.09.0520
https://doi.org/10.2135/cropsci2008.09.0520
Publikováno v:
Journal of Nanoscience and Nanotechnology. 6:3547-3550
We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn–Ni nanoparticles/Ag schemes. The Zn–Ni nanoparticles/Ag contacts produce specific contact resistances of 10−5–10−6 Ωcm2 when annealed at tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48362e84ad4889bc9e3319ca6b592796
https://doi.org/10.1166/jnn.2006.053
https://doi.org/10.1166/jnn.2006.053
Autor:
Dong-Yu Kim, Tae Yeon Seong, Seok Kim, Yu-Sun Park, June O. Song, Takhee Lee, Hyun Gi Hong, C. Sone, Jaehee Cho
Publikováno v:
Semiconductor Science and Technology. 21:594-597
We report on the enhancement of the light output of near-UV (298 nm) GaN-based light-emitting diodes (LEDs) by using nanopatterned indium tin oxide (ITO) p-type contact layers. One-dimensional (1D) and two-dimensional (2D) nanopatterns are defined us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f43229e4fd3cb6339a755e71a3e2d37
https://doi.org/10.1088/0268-1242/21/5/004
https://doi.org/10.1088/0268-1242/21/5/004
Publikováno v:
phys. stat. sol. (a). 201:2663-2667
InGaN-GaN multiple quantum well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) with and without n-AlGaN electron tunneling barriers (ETBs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), are characterized by com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a124aafa01a6d1fc67ecf1e168f3c78
https://doi.org/10.1002/pssa.200405031
https://doi.org/10.1002/pssa.200405031
Autor:
M. A. Reshchikov, K. Y. Lee, Feng Yun, C. Sone, Jacek B. Jasinski, Hadis Morkoç, Zuzanna Liliental-Weber, K. S. Ramaiah, Daming Huang, Sang-Yong Park
Publikováno v:
Journal of Materials Science: Materials in Electronics. 14:233-245
Structural and optical studies have been performed on GaN, InGaN layers, In0.08Ga0.92N/GaN heterostructures, In0.08Ga0.92N/In0.02Ga0.98N single and multiquantum wells grown by metal organic chemical vapor deposition (MOCVD) and GaN by molecular beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6fb9f72540230591d50ac2f75037218
https://doi.org/10.1023/a:1022938114450
https://doi.org/10.1023/a:1022938114450
Publikováno v:
Solid State Communications. 120:509-514
The optical properties and recombination kinetics of the InGaN/GaN double quantum well (DQW) structures with different well thickness (Lw) have been studied by means of photoluminescence (PL), time-resolved PL, and cathodoluminescence (CL) measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61795363c87f33a655350c06b53b1d7a
https://doi.org/10.1016/s0038-1098(01)00438-0
https://doi.org/10.1016/s0038-1098(01)00438-0
Publikováno v:
Solid State Communications. 118:547-551
The effects of Si doping on the optical properties and recombination dynamics of InGaN/GaN multiple quantum wells (MQWs) has been investigated by means of photoluminescence (PL) and time-resolved PL (TRPL) measurements. The peak energies and the full
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33f0403d4b6c046a997b1396f0c8eca7
https://doi.org/10.1016/s0038-1098(01)00167-3
https://doi.org/10.1016/s0038-1098(01)00167-3
Autor:
Sung Kyu Yu, Mee-Yi Ryu, Eunsoon Oh, Yong Jo Park, Okhyun Nam, Eun-joo Shin, C. Sone, Phil Won Yu, Joo In Lee
Publikováno v:
Journal of Applied Physics. 89:634-637
A systematic study of time-resolved photoluminescence spectra from In0.15Ga0.85N/In0.015Ga0.985N quantum wells (QWs) with different Si-doping concentration in the barriers has been carried out. The 10 K recombination lifetimes in the QWs depend stron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6c1bedb293560397f91ce9bd1bcc319
https://doi.org/10.1063/1.1331077
https://doi.org/10.1063/1.1331077
Autor:
Joo In Lee, Eunsoon Oh, T.I Kim, Sungkyu Yu, Okhyun Nam, C. Sone, Y.J Yu, Eun-joo Shin, P.W Yu, Mee-Yi Ryu, Yongjo Park
Publikováno v:
Solid State Communications. 116:675-678
We have studied the effects of Si doping on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N multiple quantum wells (MQWs) by photoluminescence (PL) and time-resolved PL measurements. As increasing Si doping in the barriers, the PL shows an in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b66a098df3f4fde206ac502890ef2a3
https://doi.org/10.1016/s0038-1098(00)00410-5
https://doi.org/10.1016/s0038-1098(00)00410-5