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Akademický článek

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A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping

Autor: Alin Iuga, Maria Dinescu, Toma Stoica, Ana-Maria Lepadatu, A. Slav, O. Cojocaru, Valentin Adrian Maraloiu, Magdalena Lidia Ciurea, Antoniu Moldovan, C. Palade, Valentin S. Teodorescu

Publikováno v: Journal of Materials Chemistry C. 9:12353-12366

Orthorhombic HfO2 exhibits nanoscale ferroelectricity that opens the perspective of ultra-scalable CMOS integration of ferroelectric memories. However, many aspects of the metastable orthorhombic crystallization mechanisms still need to be elucidated

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::17c3c9225c33bfff2aac0d7bbcbe334a
https://doi.org/10.1039/d1tc02921e

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GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics

Autor: Sorina Iftimie, H. Stroescu, Toma Stoica, Magdalena Lidia Ciurea, Mariuca Gartner, C. Palade, A. Slav, Mariana Braic, Valentin S. Teodorescu, Nicolae Catalin Zoita, Dan Buca, I. Dascalescu, Sorina Lazanu, Ana-Maria Lepadatu

Publikováno v: ACS Applied Materials & Interfaces. 12:56161-56171

The development of short-wave infrared (SWIR) photonics based on GeSn alloys is of high technological interest for many application fields, such as the Internet of things or pollution monitoring. The manufacture of crystalline GeSn is a major challen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7570e55d6a45c04eb80d7ddd667a9f08
https://doi.org/10.1021/acsami.0c15887

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Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe–TiO2 Films and Multilayers

Autor: Sorina Iftimie, Toma Stoica, Florin Comanescu, C. Palade, Ana-Maria Lepadatu, Valentin S. Teodorescu, Adrian Dinescu, A. Slav, O. Cojocaru, Valentin-Adrian Maraloiu, Magdalena Lidia Ciurea

Publikováno v: The Journal of Physical Chemistry C. 124:25043-25053

Continuous development of Si photonics requires ecological and cost-effective materials. In this work, SiGe nanocrystals (NCs) embedded in TiO2 are investigated as a photosensitive material for vis...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f6bfb2f706a05fd40afa93f7de6c8367
https://doi.org/10.1021/acs.jpcc.0c06290

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Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection

Autor: Sorina Iftimie, Elena Matei, Dan Buca, A. Slav, Florin Comanescu, C. Palade, Ana-Maria Lepadatu, Valentin S. Teodorescu, Mariana Braic, Sorina Lazanu, Magdalena Lidia Ciurea, Nicolae Catalin Zoita, Toma Stoica, I. Dascalescu

Publikováno v: ACS Applied Materials & Interfaces. 12:33879-33886

GeSn alloys have the potential of extending the Si photonics functionality in shortwave infrared (SWIR) light emission and detection. Epitaxial GeSn layers were deposited on a relaxed Ge buffer on Si(100) wafer by using high power impulse magnetron s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1378daeb10126040e11a787a2cfe98f1
https://doi.org/10.1021/acsami.0c06212

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Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared

Autor: Doru Ursutiu, C. Palade, Ana-Maria Lepadatu, Magdalena Lidia Ciurea, Cornel Samoila, Valentin S. Teodorescu, A. Slav, Toma Stoica

Publikováno v: Materials, Vol 14, Iss 7040, p 7040 (2021)
Materials
Volume 14
Issue 22

Group IV nanocrystals (NCs), in particular from the Si–Ge system, are of high interest for Si photonics applications. Ge-rich SiGe NCs embedded in nanocrystallized HfO2 were obtained by magnetron sputtering deposition followed by rapid thermal anne

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9fc6553f57db4f7d831346fc2c1801e
https://www.mdpi.com/1996-1944/14/22/7040

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Memory properties of GeZrO2 based trilayer structure

Autor: A. Slav, Magdalena Lidia Ciurea, C. Palade

Publikováno v: 2021 International Semiconductor Conference (CAS).

The memory properties of a trilayer structure of ZrO 2 /Ge-ZrO 2 /ZrO 2 /Si-p were investigated. The trilayer was prepared by magnetron sputtering deposition followed by a rapid thermal annealing process for obtaining Ge nanocrystals embedded in ZrO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e8917c632a327587c2ec14f932776f66
https://doi.org/10.1109/cas52836.2021.9604154

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In-situ magnetron sputtering co-deposition of Ge nanoparticles in Si3N4 films for near infrared detection

Autor: Magdalena Lidia Ciurea, P. Prepelita, Ionel Stavarache, C. Palade, V. S. Teodorescu

Publikováno v: 2021 International Semiconductor Conference (CAS).

Deposition of Ge nanoparticles in Si 3 N 4 films by heating Si and quartz substrates at 500 °C were obtained using co-sputtering Ge, and Si3N4. Their structure and photo-electrical behaviour were investigated by transmission electron microscopy, cur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b11cb19aa416e002b2efb35cf19e5f72
https://doi.org/10.1109/cas52836.2021.9604124

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