Zobrazeno 1 - 10
of 64
pro vyhledávání: '"C, Hermannstädter"'
Autor:
Matthias Heldmaier, Peter Michler, M. Witzany, Jie Peng, Oliver G. Schmidt, Gabriel Bester, Armando Rastelli, C. Hermannstädter, Lijuan Wang
Publikováno v:
physica status solidi (b). 249:710-720
1 Institut fur Halbleiteroptik und Funktionelle Grenzflachen, Universitat Stuttgart, Allmandring 3, 70569 Stuttgart, Germany 2 Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan 3 Institut fur Integrative Nanowiss
Autor:
Michael Jetter, Wolfgang-Michael Schulz, Peter Michler, Robert Roßbach, C. Hermannstädter, G. J. Beirne, M. Reischle
Publikováno v:
Journal of Crystal Growth. 310:5089-5092
We demonstrate the growth of InP/GaInP quantum dots on a low density InAs/GaAs island seed layer ( 10 7 cm - 2 ) by metal-organic vapor phase epitaxy. The strain produced by the underlying InAs islands results in a distinct bimodal size distribution
Autor:
M. Witzany, Oliver G. Schmidt, Peter Michler, M. Seible, Michael Jetter, C. Hermannstädter, L. J. Wang, Robert Roßbach, Armando Rastelli, Matthias Heldmaier
Publikováno v:
Physical Review B. 85
We perform excited-state spectroscopy of single self-assembled lateral InGaAs quantum dot molecules embedded in a planar microcavity structure, which are grown using a combination of metal-organic vapor phase and solid-source molecular beam epitaxy.
Autor:
Peter Michler, Matthias Heldmaier, Gabriel Bester, M. Witzany, Armando Rastelli, Suwit Kiravittaya, C. Hermannstädter, L. J. Wang, Jie Peng, Oliver G. Schmidt
Publikováno v:
Physical Review B. 81
We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes discern two well
Autor:
H, Sasakura, S, Kuramitsu, Y, Hayashi, K, Tanaka, T, Akazaki, E, Hanamura, R, Inoue, H, Takayanagi, Y, Asano, C, Hermannstädter, H, Kumano, I, Suemune
Publikováno v:
Physical review letters. 107(15)
We experimentally demonstrate Cooper pairs' drastic enhancement of the band-to-band radiative recombination rate in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombin
Autor:
Gabriel Bester, M. Witzany, Oliver G. Schmidt, Armando Rastelli, L. J. Wang, Peter Michler, C. Hermannstädter, Matthias Heldmaier, Jie Peng, G. J. Beirne
We report on the charge carrier dynamics in single lateral quantum dot molecules and the effect of an applied electric field on the molecular states. Controllable electron tunneling manifests itself in a deviation from the typical excitonic decay beh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9677cb7601b6e7fd7fce6108a5ba26a9
Autor:
C. Hermannstädter, Elisabeth Müller, Armando Rastelli, Peter Michler, Lijuan Wang, G. J. Beirne, Oliver G. Schmidt
Publikováno v:
SPIE Proceedings.
We demonstrate direct control over the level of lateral quantum coupling between two self-assembled InGaAs/GaAs quantum dots. This coupled system, which we also refer to as a lateral quantum dot molecule, was produced using a unique technique which c
Publikováno v:
AIP Conference Proceedings.
The two laterally coupled quantum dots, also referred to as lateral quantum dot molecules, exhibit a characteristic photoluminescence spectrum consisting of six dominant emission lines that are due to neutral and charged excitonic as well as biexcito
Autor:
C. Hermannstädter, Oliver G. Schmidt, Lijuan Wang, G. J. Beirne, Peter Michler, Armando Rastelli
Publikováno v:
Physical Review Letters. 96
Lateral quantum coupling between two self-assembled (In,Ga)As quantum dots has been observed. Photon statistics measurements between the various excitonic and biexcitonic transitions of these lateral quantum dot molecules display strong antibunching
Autor:
Armando Rastelli, G. J. Beirne, C. Hermannstädter, L. J. Wang, Oliver G. Schmidt, Peter Michler
Publikováno v:
Scopus-Elsevier
We report lateral quantum coupling between two self-assembled InGaAs/GaAs quantum dots. Single-photon photoluminescence emission has been observed from this quantum dot molecule and the level of coupling can be controlled using a static electric fiel