Zobrazeno 1 - 10
of 141
pro vyhledávání: '"C, Convertino"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1170-1174 (2019)
In this paper, we demonstrate InGaAs FinFETs 3-D sequentially (3DS) integrated on top of a fully depleted silicon-on-insulator CMOS. Top layer III-V FETs are fabricated using a Si CMOS compatible HKMG replacement gate flow and self-aligned raised sou
Externí odkaz:
https://doaj.org/article/9cf5223556f2415398afb7ec1ea87665
Autor:
M. Kohli, D. Chelladurai, A. Messner, Y. Horst, D. Moor, J. Winiger, T. Blatter, T. Buriakova, C. Convertino, F. Eltes, M. Zervas, Y. Fedoryshyn, U. Koch, J. Leuthold
Publikováno v:
Journal of Lightwave Technology, 41 (12)
A high-speed plasmonic barium titanate (BTO, BaTiO3) Mach-Zehnder modulator is presented. We combine nanoscale plasmonics with BTO as solid-state active material and silicon nitride (SiN) for versatile and low loss waveguiding, and integrate them in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::256675f7efe2634160b7e647a6b3fdb8
https://hdl.handle.net/20.500.11850/622064
https://hdl.handle.net/20.500.11850/622064
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1170-1174 (2019)
In this paper, we demonstrate InGaAs FinFETs 3-D sequentially (3DS) integrated on top of a fully depleted silicon-on-insulator CMOS. Top layer III–V FETs are fabricated using a Si CMOS compatible HKMG replacement gate flow and self-aligned raised s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08f90df0e5715dcfab704f5df5f13338
https://ieeexplore.ieee.org/document/8760578/
https://ieeexplore.ieee.org/document/8760578/
Autor:
Adrian M. Ionescu, Lukas Czornomaz, C. Convertino, Kirsten E. Moselund, Daniele Caimi, Cezar B. Zota, Heinz Schmid
Publikováno v:
Nature Electronics
Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less than 60 mV of gate voltage swing to induce one order of magnitude va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::540b51a21ac66f69054fd6ade691ce10
Publikováno v:
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
We demonstrate 1T-DRAMs based on the floating body effect in InGaAs-on-Si FETs. Using optimized quantum well channel heterostructures, retention times are enhanced and overall energy consumption is strongly reduced, resulting in the lowest write and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::790b2e445966c8970599bf213f32ae95
https://doi.org/10.1109/eurosoi-ulis49407.2020.9365288
https://doi.org/10.1109/eurosoi-ulis49407.2020.9365288
Autor:
C. Convertino, Heike Riel, Andreas Schenk, Lukas Czornomaz, Heinz Schmid, Saurabh Sant, Kirsten E. Moselund
Publikováno v:
ECS Transactions. 85:139-150
The tunnel FET (TFET) is considered as one of the most promising devices for ultra-low power operation, and it is clear that heterojunction devices are required to achieve simultaneously steep slope and high on-current (Ion). However, technologically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5e6d462a482c7fa8452f84cee220811
https://doi.org/10.1149/08506.0139ecst
https://doi.org/10.1149/08506.0139ecst
Akademický článek
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Akademický článek
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Akademický článek
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Autor:
C. Convertino, Walter Riess, Peter Müller, Thomas Morf, Cezar B. Zota, Lukas Czornomaz, Stefan Filipp
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this work, we present a sequentially 3D integrated III-V-on-CMOS RF MOSFET technology with state-of-the-art RF performance. This platform is particularly promising for cryogenic applications where cooling power and space is limited, as the III-V d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4918fbd7b24194a98a34aee4428043b2
https://doi.org/10.1109/iedm19573.2019.8993505
https://doi.org/10.1109/iedm19573.2019.8993505