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pro vyhledávání: '"Byungryul Ryum"'
Publikováno v:
ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364).
This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's). Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performanc
Publikováno v:
ICMMT 2000. 2000 2nd International Conference on Microwave & Millimeter Wave Technology Proceedings (Cat. No.00EX364); 2000, p84-87, 4p