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pro vyhledávání: '"Byungin Lee"'
Autor:
Byungin Lee
Publikováno v:
Korean Studies of Modern Chinese History. 83:115-142
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b23f7b31caff8075fc6ad9b431bac60
https://doi.org/10.29323/mchina.2019.9.83.115
https://doi.org/10.29323/mchina.2019.9.83.115
Autor:
Byungin, Lee, Le Van, Tuan
Publikováno v:
Epilepsia. 59:135-139
The magnitude of the treatment gap (TG) for convulsive status epilepticus (CSE) in resource-poor countries is unknown. Hospital-based cohort studies from developing countries revealed that the management of CSE was usually suboptimal due to lack of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1722621bf4b692ea3091530cae5c5a2a
https://doi.org/10.1111/epi.14484
https://doi.org/10.1111/epi.14484
Autor:
Byungin Lee, Hyun-Seung Yoo, Sung-Kye Park, Yong Jun Kim, Gyu-Seog Cho, Hyug Su Kwon, Woo Young Choi, SangMoo Choi
Publikováno v:
IEEE Electron Device Letters. 38:164-167
The influence of intercell trapped charge (ITC)-the charge trapped at the inter-cell nitride regions by fringe electric fields during program and erase operations-on vertical NAND (VNAND) flash memory is investigated. In addition to conventional degr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b06a9c2798f00de114d1cd72f8212bf2
https://doi.org/10.1109/led.2016.2643278
https://doi.org/10.1109/led.2016.2643278
Publikováno v:
Japanese Journal of Applied Physics. 53:04ED12
Abnormal cell-to-cell interference occurring in NAND flash memory has been investigated. In the case of extremely downscaled NAND flash memory, cell-to-cell interference increases abnormally. The abnormal cell-to-cell interference has been observed i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1874400e06e0fbf0f7d99bf987ae000a
https://doi.org/10.7567/jjap.53.04ed12
https://doi.org/10.7567/jjap.53.04ed12