Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Byungin Lee"'
Autor:
Byungin Lee
Publikováno v:
Korean Studies of Modern Chinese History. 83:115-142
Autor:
Byungin, Lee, Le Van, Tuan
Publikováno v:
Epilepsia. 59:135-139
The magnitude of the treatment gap (TG) for convulsive status epilepticus (CSE) in resource-poor countries is unknown. Hospital-based cohort studies from developing countries revealed that the management of CSE was usually suboptimal due to lack of a
Autor:
Byungin Lee, Hyun-Seung Yoo, Sung-Kye Park, Yong Jun Kim, Gyu-Seog Cho, Hyug Su Kwon, Woo Young Choi, SangMoo Choi
Publikováno v:
IEEE Electron Device Letters. 38:164-167
The influence of intercell trapped charge (ITC)-the charge trapped at the inter-cell nitride regions by fringe electric fields during program and erase operations-on vertical NAND (VNAND) flash memory is investigated. In addition to conventional degr
Publikováno v:
Japanese Journal of Applied Physics. 53:04ED12
Abnormal cell-to-cell interference occurring in NAND flash memory has been investigated. In the case of extremely downscaled NAND flash memory, cell-to-cell interference increases abnormally. The abnormal cell-to-cell interference has been observed i
Autor:
Beniczky, Sándor, Rampp, Stefan, Asadi‐Pooya, Ali A., Rubboli, Guido, Perucca, Emilio, Sperling, Michael R.
Publikováno v:
Epilepsia (Series 4); Jan2021, Vol. 62 Issue 1, p220-227, 8p
Publikováno v:
Epilepsia (Series 4); Mar2019 Supplement S1, Vol. 60, p7-21, 15p
Publikováno v:
Epilepsia (Series 4); Oct2018 Supplement S2, Vol. 59 Issue 2, pi-viii, 5p
Autor:
Choi, Woo Young, Kwon, Hyug Su, Kim, Yong Jun, Cho, Gyu-Seog, Lee, Byungin, Yoo, Hyunseung, Choi, Sangmoo, Park, Sung-Kye
Publikováno v:
IEEE Electron Device Letters; Feb2017, Vol. 38 Issue 2, p164-167, 4p
Publikováno v:
Proceedings of SPIE; 2/7/2022, Vol. 12071, p120710T-120710T-9, 1p
Publikováno v:
Neurocritical Care; Sep2011, Vol. 15, p1-283, 283p