Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Byunghoon Na"'
Autor:
Jeongil Bang, Eun Cheol Do, Haeryong Kim, Hyungjun Kim, Bo‐Eun Park, Byunghoon Na, Jooho Lee, Sehyuck Park, Ho Won Jang, Jaeho Lee
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract Perovskite‐oxide‐based capacitors, which exhibit high charge storage capacity, have attracted considerable attention as a potential candidate for overcoming the limitations of nanoscale integration. Unfortunately, a dead layer forms in t
Externí odkaz:
https://doaj.org/article/7c0a63ea3d7d449dbbdd55f026bd0e73
Autor:
Jeongil Bang, Jaeho Lee, Eun Cheol Do, Hyungjun Kim, Byunghoon Na, Haeryong Kim, Bo-Eun Park, Jooho Lee, Che-Heung Kim, Ho Won Jang, Yongsung Kim
Publikováno v:
NPG Asia Materials, Vol 15, Iss 1, Pp 1-7 (2023)
Abstract Capacitors based on ABO3-type perovskite oxides show considerable promise for overcoming the limitations of nanoscale integration with dynamic random access memory (DRAM) devices. Among the thermodynamically stable perovskite oxides, titanat
Externí odkaz:
https://doaj.org/article/bb1135d9b0774817898bd2466837a5d3