Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Byungchoul Park"'
Autor:
Byungchoul Park, Byungwook Ahn, Hyun-Seung Choi, Jinwoong Jeong, Kangmin Hwang, Taewoo Kim, Myung-Jae Lee, Youngcheol Chae
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::042f384fd28496eeb5fce5a342a583fe
https://doi.org/10.1109/isscc42615.2023.10067344
https://doi.org/10.1109/isscc42615.2023.10067344
Autor:
Youngcheol Chae, Chanmin Park, Myung-Jae Lee, Injun Park, Yoondeok Na, Byungchoul Park, Woojun Choi
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:2956-2967
This article presents a 64 $\times $ 64 indirect time-of-flight (iToF) image sensor with a depth range of 50 m, integrated into a 1P4M 110-nm CMOS process. The sensor is based on a single-photon avalanche diode (SPAD), the range-dependent phase delay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::016a7f7366b8c71a0b0d5b716ab24832
https://doi.org/10.1109/jssc.2021.3094524
https://doi.org/10.1109/jssc.2021.3094524
Publikováno v:
IEEE Journal of Solid-State Circuits. 55:898-907
This article presents a 640 $\times $ 640 fully dynamic CMOS image sensor for the always-on operation. It consists of a dynamic pixel source follower (SF), whose output signal is sampled into a parasitic column capacitor and then read out by a dynami
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30693607db02b93efd138ecb77c0da6f
https://doi.org/10.1109/jssc.2019.2959486
https://doi.org/10.1109/jssc.2019.2959486
A 40-m Range 90-frames/s CMOS Time-of-Flight Sensor Using SPAD and In-Pixel Time-Gated Pulse Counter
Publikováno v:
IEEE Solid-State Circuits Letters. 3:422-425
This letter presents a CMOS indirect time-of-flight (i-ToF) image sensor, which is based on a single-photon avalanche diode (SPAD) and a compact in-pixel time-gated pulse counter. The proposed SPAD-based i-ToF sensor makes it possible to achieve a ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90682ba5213f038f6f4c8dcaaba3965f
https://doi.org/10.1109/lssc.2020.3025625
https://doi.org/10.1109/lssc.2020.3025625
Publikováno v:
IEEE Transactions on Electron Devices. 66:2986-2991
Silicon single-photon avalanche diodes (Si-SPADs) fabricated with standard CMOS technology and providing the advantages of low noise, low cost, and compatibility with additional circuits are promising candidates for single-photon detection fields. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9425e8db9f7486b7413d3e56d651a85
https://doi.org/10.1109/ted.2019.2913714
https://doi.org/10.1109/ted.2019.2913714
Autor:
Won-Yong, Ha, Eunsung, Park, Byungchoul, Park, Youngcheol, Chae, Woo-Young, Choi, Myung-Jae, Lee
Publikováno v:
Optics Express. 30:14958
This paper presents the effect of shallow trench isolation (STI) on the dark count rate (DCR) and after-pulsing probability (APP) of deep-junction-based single-photon avalanche diodes (SPADs). Two different SPADs were fabricated in 110 nm CMOS image
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b0896ef982b7a05d69f107b6ca1cb54
https://doi.org/10.1364/oe.455513
https://doi.org/10.1364/oe.455513
Publikováno v:
Silicon Photonics XV.
Single photon avalanche diodes (SPADs) manufactured through the standard CMOS process have a major advantage in reducing the cost and expendability in comparison with the SPAD made with the custom process. SPAD is a single photon sensitive diode usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a823d93f922d1f5771bc98b9d77c915
https://doi.org/10.1117/12.2544204
https://doi.org/10.1117/12.2544204
Publikováno v:
Microelectronics Reliability. :610-613
Single photon avalanche diode (SPAD) is one of the promising candidates among photodetectors due to its high sensitivity and accuracy. Along with the existing custom compound avalanche diodes, SPADs fabricated in CMOS technology have been suggested a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5106371596cbd5f737bc85593e4b4c2
https://doi.org/10.1016/j.microrel.2017.07.050
https://doi.org/10.1016/j.microrel.2017.07.050
Publikováno v:
VLSI Circuits
This paper presents a $640\times 640$ fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea14f8c7c543781744223f18a9380a51
https://doi.org/10.23919/vlsic.2019.8778169
https://doi.org/10.23919/vlsic.2019.8778169
Publikováno v:
VLSI Circuits
This paper presents a time-of-flight (ToF) image sensor for outdoor applications. The sensor employs a gain-modulated avalanche photodiode (APD) that achieves high modulation frequency. The suppression capability of background light is greatly improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cae5ae7e96d2d44aa3b85abcfe80758
https://doi.org/10.23919/vlsic.2019.8778015
https://doi.org/10.23919/vlsic.2019.8778015