Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Byung-sick Moon"'
Autor:
Junsuk Park, Kyung Seok Oh, Young Sang Choi, Taesik Na, Seong-Jin Jang, Byung-Chul Kim, Jongeun Lee, Sang Hee Kim, Byung-sick Moon, Junghwan Park, Ki-Won Lee, Yong Shim, Dong Su Lee, Haeyoung Chung, Sang-Hee Kang, Inwoo Jun, Joo Sun Choi, Han-Gyun Jung, Jung-Hwan Choi, Hanki Jeoung, Hundai Choi, Jang Seok Choi, Kyomin Sohn, In-Dal Song, Dae-Hee Jung, Byung-Hyun Lee, Won-Il Bae, Ju-Seop Park
Publikováno v:
ISSCC
A higher performance DRAM is required by the market due to the increasing of bandwidth of networks and the rise of high-capacity multimedia content. DDR4 SDRAM is the next-generation memory that meets these demands in computing and server systems. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65a6811c6578bf6e7f19d3fb6742bd23
https://doi.org/10.1109/jssc.2012.2213512
https://doi.org/10.1109/jssc.2012.2213512
Autor:
Hong Sun Hwang, Soo Won Kim, Young Hyun Jun, Churoo Park, Byung Sick Moon, Ahn Woo Song, Seong Jin Jang, Jong Pil Son, Joo Sun Choi, Jin-Ho Kim, Seung Uk Han, Satoru Yamada
Publikováno v:
IEICE Transactions on Electronics. :1690-1697
A reliable antifuse scheme has been very hard to build, which has precluded its implementation in DRAM products. We devised a very reliable multi-cell structure to cope with the large process variation in the DRAM-cell-capacitor type antifuse system.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a1e1b0e6924d1592fd11027004f1c81
https://doi.org/10.1587/transele.e94.c.1690
https://doi.org/10.1587/transele.e94.c.1690
Autor:
Jin Ho Kim, Hongsun Hwang, Seong-Jin Jang, Seung Uk Han, Young-Hyun Jun, Byung-sick Moon, Ahn Woo Song, Joo Sun Choi, Churoo Park, Jong-Pil Son, Soo-Won Kim
Publikováno v:
ESSCIRC
A highly reliable antifuse cell and its sensing scheme that can be actually adopted in DRAM are presented. A multi-cell structure is newly devised to circumvent the large process variation problems of the DRAM cell capacitor type antifuse system. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7bc40b9cf90ff5fa301798cc5a32e5d
https://doi.org/10.1109/esscirc.2010.5619748
https://doi.org/10.1109/esscirc.2010.5619748
Publikováno v:
2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302).
With a robust array power supply, the array noise is remarkably suppressed in 256-Mb packet-based DRAM. The array power supply is equipped with direct driver discharge, Vgs clamp, high-VCC compensator, and low-VCC Vgs booster. The VCCA drop and overs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b9af4d3781b99f1aa580831c90600b5
https://doi.org/10.1109/vlsic.2002.1015060
https://doi.org/10.1109/vlsic.2002.1015060
Autor:
Jong-Pil Son, Jin Ho Kim, Woo Song Ahn, Seung Uk Han, Byung-Sick Moon, Churoo Park, Hong-Sun Hwang, Seong-Jin Jang, Joo Sun Choi, Young-Hyun Jun, Soo-Won Kim
Publikováno v:
Proceedings of the ESSCIRC, 2010; 2010, p482-485, 4p
Publikováno v:
2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302); 2002, p116-117, 2p