Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Byung-hyun Yim"'
Autor:
Byung Hyun Yim, Kwang Hee Lee, Chi-Young Choi, Won-Je Park, Ji-hoon Jung, Dae-cheol Seong, Jeongmin Choi, Jun-taek Lee
Publikováno v:
Sensors and Actuators A: Physical. 167:14-18
We, authors report a study on the junction leakage current of CMOS image sensor adopting p-epi/n-sub structure. High leakage current (more than 100 μA) through the junction between p-epi and n-sub (at reverse bias) were observed with non-uniformed o
Autor:
Donghyuk Park, Chung Youngwoo, Tae Chan Kim, Gab-Soo Han, Young-Chan Kim, Yunkyung Kim, Duck-Hyung Lee, Jeonsook Lee, Eun-Kyung Park, Seungjoo Nah, Y. Jay Jung, Dongyoung Jang, Gyehun Choi, Hong-ki Kim, Jong-Eun Park, Yi-tae Kim, Taeheon Lee, Jung-Chak Ahn, Yooseung Lee, Yujung Choi, Kyung-Ho Lee, Joon-Hyuk Im, Bum-Suk Kim, Mi Hye Kim, Daniel K. J. Lee, Haeyong Park, Heesang Kown, Sangjun Choi, Ihara Hisanori, Goto Hiroshige, Byung-hyun Yim, Won-Je Park, Sung-Ho Choi, Youngsun Oh, Seung-Wook Lee, Taesub Jung, H.S. Jeong, Chi-Young Choi, Gi-Doo Lee
Publikováno v:
ISSCC
According to the trend towards high-resolution CMOS image sensors, pixel sizes are continuously shrinking, towards and below 1.0μm, and sizes are now reaching a technological limit to meet required SNR performance [1-2]. SNR at low-light conditions,