Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Byung-Sung O"'
Publikováno v:
Journal of the Korean Institute of Resources Recycling. 23:25-32
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5bda5933e7d8d861697c6d7bf9bb882
https://doi.org/10.7844/kirr.2014.23.1.25
https://doi.org/10.7844/kirr.2014.23.1.25
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 23:848-853
We have grown GaN nanowires by the low pressure MOCVD method on Ni deposited oxidized Si surface and have established optimum conditions by observing surface microstructure and its photoluminescence. Optimum growth temperature of , growth time of 30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3952ae7e757b9df37381f129e21bd44
https://doi.org/10.4313/jkem.2010.23.11.848
https://doi.org/10.4313/jkem.2010.23.11.848
Autor:
Tae-Kyoung Koo, Young-Moon Yu, Man-Young Yoon, Jae-Hwan Park, Dae Jung Kim, Changsoo Kim, Yong Dae Choi, Byung-Sung O
Publikováno v:
Journal of the Korean Physical Society. 53:202-206
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5949c40e9af8a60f6a9250967f688329
https://doi.org/10.3938/jkps.53.202
https://doi.org/10.3938/jkps.53.202
Publikováno v:
Journal of the Korean Vacuum Society. 16:192-196
ZnSe/CdSe/ZnSe single quantum wells with different well thickness were grown by hot wall epitaxy. The quantum well thicknesses were measured by TEM. The critical thickness of single quantum well layer was found to be about from the intensities and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a887102e0a15f58f3bb86899f3ca314e
https://doi.org/10.5757/jkvs.2007.16.3.192
https://doi.org/10.5757/jkvs.2007.16.3.192
Publikováno v:
Japanese Journal of Applied Physics. 42:7349-7353
Polycrystalline gallium nitride (GaN) thin films of thickness 3.0 µm grown on silica glass substrates were annealed by a line beam of a KrF excimer laser under vacuum. The applied laser energy density was in the range of 300–600 mJ/cm2. Photolumin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72ad01442747d06b246a1b560a6812b9
https://doi.org/10.1143/jjap.42.7349
https://doi.org/10.1143/jjap.42.7349
Autor:
Chang-su Kim, Jaesik Yoon, Jae-Kwan Kim, Jaeyeol Yang, Ji-Myon Lee, Hyun-Seon Hong, Soon-Jik Hong, Byung-Sung O
Publikováno v:
Japanese Journal of Applied Physics. 54:02BD03
We examined the characteristics of one-dimensional GaN nanowires grown by a vapor–liquid–solid method using metal organic chemical vapor deposition equipment. GaN nanowires grown at 700 °C were uniform in size, approximately 5 µm in length and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::157242aabd9b46dbe71d3ec0a3054a8f
https://doi.org/10.7567/jjap.54.02bd03
https://doi.org/10.7567/jjap.54.02bd03
Akademický článek
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Publikováno v:
Proceedings of the Fourth Asian Symposium on Information Display.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1d74a091255fac700ef5339fed21f9e
https://doi.org/10.1109/asid.1997.631439
https://doi.org/10.1109/asid.1997.631439
Publikováno v:
Proceedings of the Fourth Asian Symposium on Information Display; 1997, p211-214, 4p
Autor:
Jae-Yeol Yang, Jae-Sik Yoon, Byung-Sung O, Chang-Su Kim, Soon-Jik Hong, Hyun-Seon Hong, Jae-Kwan Kim, Ji-Myon Lee
Publikováno v:
Japanese Journal of Applied Physics; Supplement2015, Vol. 54 Issue 2S, p1-1, 1p