Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Byung-Ok Park"'
Publikováno v:
Journal of the Korean institute of surface engineering. 49:98-103
The dry etching characteristics of SnO thin films were investigated using inductively coupled plasma (ICP) in Ar, , chemistries. the SnO thin films were deposited by reactive rf magnetron sputtering with Sn metal target. In order to study the etching
Publikováno v:
Journal of the Korean institute of surface engineering. 46:105-110
ZnS thin films were prepared on glass substrate by using chemical bath deposition method. The influence of ammonia () and () as complexing agents on structural and optical properties of ZnS thin films were investigated. Zinc acetate dihydrate () and
Autor:
Ki-Hyun Kim, Byung-Ok Park
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 23:108-113
Chalcopyrite material (CIS) is known to be a very prominent absorber layer for high efficiency thin film solar cells. Current interest in the photovoltaic industry is to identify and develop more suitable materials and processes for the fabrication o
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 22:127-133
To achieve low-cost and high-efficiency of thin-film solar cells applications, the sol-gel method that can be coated on a large area substrate, obtain homogeneous thin films of high purity was used. We studied structural and optical characteristics v
Publikováno v:
SAE International Journal of Passenger Cars - Mechanical Systems. 5:22-29
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 22:15-18
Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [] and indium acetate [In] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 21:158-163
CuInS2 thin films were prepared using a sol-gel spin-coating method. That makes large scale substrate coating, simple equipment, easy composition control available. The structural and optical properties of CuInS2 thin films that include less toxic ma
Publikováno v:
Solid-State Electronics. 54:323-326
A stable aluminum oxide (Al 2 O 3 ) film was obtained on a plastic substrate for use as low-temperature polycrystalline silicon (LTPS) thin film transistors (TFT) in a flexible display by in situ plasma oxidation prior to the deposition of gate diele
Publikováno v:
Journal of the Korean Physical Society. 53:2467-2474
Publikováno v:
Thin Solid Films. 516:4709-4712
Copper indium disulfide (CuInS 2 ) absorber layers were prepared by using a paste coating method. CuInS 2 and CuS were chosen as precursor powders. Ethylcellulose and phosphate ester were used respectively as a resin and a dispersant. Dihydroterpineo