Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Byung-Kil Choi"'
Autor:
Byung Kil Choi
Publikováno v:
Journal of the Association of Western Art History. 55:75-96
Autor:
Byung-kil Choi
Publikováno v:
Europe Culture Arts Association. 12:25-52
Autor:
Byung Kil Choi
Publikováno v:
Journal of Basic Design & Art. 22:381-394
Autor:
Byung-kil Choi
Publikováno v:
Dongak Art History. 28:7-34
Autor:
Byung Kil Choi
Publikováno v:
Korean Chinese Relations Review. 6:167-194
Autor:
Byung Kil Choi, Young Sun Jin
Publikováno v:
Journal of Basic Design & Art. 20:501-520
Autor:
Byung Kil Choi
Publikováno v:
Journal of Basic Design & Art. 19:521-532
Publikováno v:
Journal of the Korean Physical Society. 53:3411-3415
We propose a cell structure with non-overlap source/drain (S/D) (or without S/D) for a NAND ash memory, which utilizes the fringing eld from control gates. In this work, a guideline for the cell device design is suggested through extensive device sim
Publikováno v:
IEEE Transactions on Nanotechnology. 7:427-433
In this paper, design considerations for the n+/p+/n+ gate bulk FinFET in sub-50-nm technology nodes is extensively studied through 3D device simulation. For the comparison of electrical characteristics of n+/p+/n+ gate bulk FinFET, the electrical ch
Publikováno v:
Japanese Journal of Applied Physics. 47:4385-4391
We proposed a new body-tied triple-gate fin-type field-effect transistor (bulk FinFET) which has different gate work-functions on the top- and side-channel regions. The effect of gate work-function on the characteristics of the bulk FinFETs was studi