Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Byung-Joong Bae"'
Autor:
Hee Tae Lee, Won-Seon Seo, Won-Jae Lee, Sang-Il Lee, Mi-Seon Park, Byung-Joong Bae, Doe-Hyung Lee
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 26:863-866
SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d45b464afc1e871c4a8ed734c9f49ddf
https://doi.org/10.4313/jkem.2013.26.12.863
https://doi.org/10.4313/jkem.2013.26.12.863
