Zobrazeno 1 - 2
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pro vyhledávání: '"Byung-Joong Bae"'
Autor:
Hee Tae Lee, Won-Seon Seo, Won-Jae Lee, Sang-Il Lee, Mi-Seon Park, Byung-Joong Bae, Doe-Hyung Lee
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 26:863-866
SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d45b464afc1e871c4a8ed734c9f49ddf
https://doi.org/10.4313/jkem.2013.26.12.863
https://doi.org/10.4313/jkem.2013.26.12.863
Autor:
Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki, Yasuhisa Sano
Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 – October 4, 2013, Miyazaki, Japan
