Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Byung-Guon Park"'
Autor:
Maddaka Reddeppa, Byung-Guon Park, Dong-Jin Nam, Chandrakalavathi Thota, Na-Hyun Bak, Kedhareswara Sairam Pasupuleti, Young-Heon Kim, Song-Gang Kim, Moon-Deock Kim
Publikováno v:
ACS Applied Nano Materials. 5:7418-7426
Autor:
R. Jeyalakshmi, Song-Gang Kim, Moon-Deock Kim, Sekhar Babu Mitta, Maddaka Reddeppa, T. Chandrakalavathi, G. Murali, Sung Ha Park, Byung-Guon Park
Publikováno v:
Current Applied Physics. 19:938-945
Although metal nanoparticles (NPs) have been widely reported, Au NPs functionalized reduced graphene oxide (rGO)/GaN nanorods (NRs) for multi-functional applications are rarely discussed. The rGO is a well known transparent electrode and has been con
Autor:
Moon-Deock Kim, Byung-Guon Park, Sung Ha Park, Sekhar Babu Mitta, Maddaka Reddeppa, Song-Gang Kim
Publikováno v:
Organic Electronics. 65:334-340
Considering the power consumption and safety risks in the presence of combustible gases, sensor operation at room temperature (RT∼28 °C) has drawn much interest in recent days. Different strategies have been found to meet the effective sensor perf
Autor:
Dojin Kim, Moon-Deock Kim, Jae Eung Oh, Byung-Guon Park, Nguyen Duc Chinh, Tae Geun Kim, Maddaka Reddeppa
Publikováno v:
Dalton Transactions. 48:1367-1375
In gas sensors, metal oxide semiconductors have been considered as favorable resistive-type toxic gas sensing materials. However, the higher temperature operation of metal oxides becomes a barrier for their wide range of applications in explosive and
Autor:
Koteswara Rao Peta, Song-Gang Kim, Kedhareswara Sairam Pasupuleti, Maddaka Reddeppa, Jae-Eung Oh, Moon-Deock Kim, Byung-Guon Park
Publikováno v:
ACS applied materialsinterfaces.
The surface states, poor carrier life, and other native defects in GaN nanorods (NRs) limit their utilization in high-speed and large-gain ultraviolet (UV) photodetection applications. Making a hybrid structure is one of the finest strategies to over
Autor:
Moon-Deock Kim, Sutripto Majumder, Young Heon Kim, Jae-Eung Oh, Maddaka Reddeppa, Byung-Guon Park, Song-Gang Kim, Dojin Kim
Publikováno v:
Nanotechnology. 31(47)
Recently, III-nitride semiconductor nanostructures, especially InGaN/GaN quantum well nanorods (NRs), have been established as a promising material of choice for nanoscale optoelectronics and photoelectrochemical (PEC) water-splitting applications. D
Publikováno v:
Nanotechnology. 31(33)
In this work, for the first time, we have made InN/In
Publikováno v:
SPIE Micro + Nano Materials, Devices, and Applications 2019.
In this work, we have investigated the variation of internal electric field of 4-period In0.16Ga0.84N/pseudo-AlInGaN multiquantum wells (MQWs) embedded in p-i-n structure by surface acoustic waves (SAWs). The pseudo-AlInGaN barriers consist of two In
Autor:
G. Murali, Byung-Guon Park, Koteswara Rao Peta, Dojin Kim, Moon-Deock Kim, Maddaka Reddeppa, Song-Gang Kim, Nguyen Duc Chinh
Publikováno v:
Sensors and Actuators B: Chemical. 264:353-362
In this work, reduced graphene oxide (rGO)/GaN nanorods (NRs) hybrid structure based sensors for hydrogen (H2) and hydrogen sulfide (H2S) gases has been demonstrated at room temperature. The morphological, elemental, and structural analyses were carr
Publikováno v:
New Physics: Sae Mulli. 67:1302-1307