Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Byung Young Shim"'
Autor:
D.H. Kang, Dong Wook Kim, Cheul Ro Lee, Jae Chul Song, Byung Young Shim, Eun A. Ko, Kannappan Santhakumar
Publikováno v:
Advanced Materials Research. :355-358
GaN epilayers were grown on lens shaped patterned sapphire substrate (PSS) (0001) and unpatterned sapphire substrate (UPSS) (0001) by metal-organic chemical vapor deposition (MOCVD). The quality of the grown GaN epilayers on the PSS and UPSS were com
Publikováno v:
Solid State Phenomena. :113-118
We have studied the Au+Ga alloy seeding method. Single-crystal GaN nano-column arrays were grown using metalorganic chemical vapor deposition (MOCVD) and their properties were investigated as a function of the growth parameters and Au thin film thick
Autor:
Jae-Chul Song, Santhakumar Kannappan, Dong-Wook Kim, D.H. Kang, Byung-Young Shim, Cheul-Ro Lee, Eun-A ko
Publikováno v:
Japanese Journal of Applied Physics. 46:2563-2566
Gallium nitride (GaN) epilayers were grown on a patterned sapphire substrate (0001) (PSS) using metalorganic chemical vapor deposition (MOCVD) for various growth time from 10 to 80 min. Structural characteristics, surface morphology and optical prope
Autor:
Byung Young Shim, Cheul Ro Lee, Santhakumar Kannappan, In Hwan Lee, Eun A. Ko, Dong Wook Kim, Jae Chul Song, D.H. Kang
Publikováno v:
Japanese Journal of Applied Physics. 46:2571-2573
Single-crystal GaN nano-column arrays were grown on Au-coated silicon (111) substrate by Au-Ga alloy seeding method using metalorganic chemical vapor deposition (MOCVD). The nano-column arrays were studied as a function of growth parameters and Au th
Autor:
D.H. Kang, Cheul-Ro Lee, Dong Wook Kim, Eun-A ko, Jae-Chul Song, Byung-Young Shim, In Hwan Lee
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.