Zobrazeno 1 - 10
of 156
pro vyhledávání: '"Byung Seong Bae"'
Publikováno v:
ACS Omega, Vol 8, Iss 40, Pp 36868-36875 (2023)
Externí odkaz:
https://doaj.org/article/f6b91f6fc59545448711791bb191f24d
Autor:
Shilin Liu, Yijing Ding, Xin Wang, Yuwei Li, Jing Chen, Zhiwei Zhao, Zhuoya Zhu, Jun Wu, Omolola Esther Fayemi, Byung Seong Bae, Ying Zhu, Wei Lei, Xiaobao Xu, Qing Li
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)
Abstract Signal amplification is vitally important for sensing low‐dose X‐rays in medical diagnosis by amplifying the generated electric read‐out signal. However, the complexity of external amplification circuits hampers device miniaturization
Externí odkaz:
https://doaj.org/article/2a26089337ee4a1d8c8406a71136d994
Autor:
Yubing Xu, Xin Wang, Yuzhu Pan, ShunJie Chai, Jie Wu, Mengrou Wang, Abida Perveen, Damian Chinedu Onwudiwe, Razika Zair Talaighil, Byung Seong Bae, Ying Zhu, Jing Chen, Wei Lei
Publikováno v:
APL Materials, Vol 11, Iss 12, Pp 121110-121110-7 (2023)
Perovskite single crystals (PSCs) photodiodes with p–n junctions have been widely studied due to their effective blocking of injected current with barriers and quickly separating the electrons and hole pairs with a built-in electric field. Here, we
Externí odkaz:
https://doaj.org/article/b7854f5395064464913c6c3849d70a5e
Autor:
Jie Wu, Xin Wang, Yubing Xu, Yuzhu Pan, Shunjie Chai, Jingda Zhao, Qi Cheng, Zhiwei Zhao, Qing Li, Byung Seong Bae, Omolola Esther Fayemi, Jianming Zhou, Ying Zhu, Wei Lei
Publikováno v:
APL Materials, Vol 11, Iss 10, Pp 101130-101130-9 (2023)
Compared with the pure lead-based MAPbBr3 (MA = CH3NH3) perovskite single crystals (PSCs), tin–lead alloy (MAPbxSn1−xBr3) PSCs with higher carrier mobility and longer carrier lifetime are expected to perform as better-quality ionization radiation
Externí odkaz:
https://doaj.org/article/eeafc66365234cfdba75c02b7783895c
Autor:
Xin Wang, Yuzhu Pan, Yubing Xu, Jingda Zhao, Yuwei Li, Qing Li, Jing Chen, Zhiwei Zhao, Xiaobing Zhang, Byung Seong Bae, Damian C. Onwudiwe, Xiaobao Xu, Wei Lei
Publikováno v:
iScience, Vol 26, Iss 10, Pp 107935- (2023)
Summary: The halide lead perovskite single crystals (HLPSCs) have great potential in gamma-ray detection with high attenuation coefficient, strong defects tolerance, and large mobility-lifetime product. However, mobile halide ions would migrate under
Externí odkaz:
https://doaj.org/article/32e928cbd3824abf90a6f539149c5740
Publikováno v:
Electronics Letters, Vol 59, Iss 19, Pp n/a-n/a (2023)
Abstract This paper delves into a structural modification of dual‐gate oxide thin film transistor (TFT). Diverging from the conventional dual‐gate TFT structure, the authors’ approach connects the bottom and top gate electrodes, effectively env
Externí odkaz:
https://doaj.org/article/7d464db5ba55469f9fd6cde86278685f
Autor:
Yeong Jo Baek, In Hye Kang, Sang Ho Hwang, Ye Lin Han, Min Su Kang, Seok Jun Kang, Seo Gwon Kim, Jae Geun Woo, Eun Seong Yu, Byung Seong Bae
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor’s channel as well as the gate electrode. After definition of
Externí odkaz:
https://doaj.org/article/6f7df80b54b44a8f92de897acee23ced
Autor:
In Hye Kang, Sang Ho Hwang, Young Jo Baek, Seo Gwon Kim, Ye Lin Han, Min Su Kang, Jae Geun Woo, Jong Mo Lee, Eun Seong Yu, Byung Seong Bae
Publikováno v:
ACS Omega, Vol 6, Iss 4, Pp 2717-2726 (2021)
Externí odkaz:
https://doaj.org/article/1ad9b77b8d0e4fab9cfa9702203a20cf
Publikováno v:
Journal of Information Display, Vol 21, Iss 4, Pp 229-234 (2020)
A solution-based spin-on glass (SOG) was applied to the gate insulator of an oxide thin-film transistor (TFT). The curing atmosphere of the SOG was investigated to enhance the performance of the self-aligned top-gate In–Ga–Zn–O (IGZO) TFT. Afte
Externí odkaz:
https://doaj.org/article/8d044827ab5a4e46a1ef87027b3bd01e
Autor:
Jingda Zhao, Xin Wang, Yuzhu Pan, Yubing Xu, Yuwei Li, Jing Chen, Jun Wu, Qing Li, Zhiwei Zhao, Xiaobing Zhang, Javed Akram, Byung Seong Bae, Haining Yang, Wei Lei
Publikováno v:
Frontiers in Physics, Vol 9 (2021)
Externí odkaz:
https://doaj.org/article/fe8ffea9f3b74611a7ec7f78eac7cca1